Effects of Annealing Temperature on Structure and Properties of PLBZT Ferroelectric Thin Films Synthesized by Sol-Gel Processing

Abstract:

[Pb_0.95(La_0.6Bi_0.4)_0.05][Zr_0.53Ti_0.47]O₃ (PLBZT) ferroelectric thin films have been synthesized on ITO-coated glass by sol-gel processing. Effects of annealing temperature on structure and properties of PLBZT have been investigated. With the increase of annealing temperature from 500°C to 550°C, the remanent polarization Pr increase slightly to the maximum value of 25.4μC/cm² due to the improvement in crystallization of PLBZT films. However, when the annealing temperature is more than 550°C, the pyrochlore phase appear and degrade the Pr of PLBZT thin films. The lowest leakage current density of 1.8×10^-9 A/cm² can be observed in PLBZT thin films when the annealing temperature is 550°C.

• Periodical: Advanced Materials Research (Volumes 602-604)
• Pages: 1461-1464
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.602-604.1461
• Online since: December 2012
• Authors: Hua Wang, Li Liu, Ji Wen Xu, Ling Yang, Shang Ju Zhou
• Keywords: Annealing Temperature, Ferroelectric Thin Film, PLBZT, Sol-Gel (SG)

References

[1] J. F. Scott: Mater. Sci. Eng. B Vol. 120 (2005), p.6

[2] M. H. Tang, Y. C. Zhou, X. J. Zheng, Z. Yan, C. P. Cheng, Z. Ye and Z. S. Hu: Solid State Electronics Vol. 51 (2007), p.371

[3] G. Leclerc, B. Domenges, G. Poullain and R. Bouregba: Appl. Surf. Sci. Vol. 253 (2006), p.1143

[4] R. Singh, T. C. Goel and S. Chandra: Mater. Res. Bull. Vol. 43 (2008), p.384

[5] A. Khodorov and M. J. M. Gomes: Thin Solid Films Vol. 515 (2006), p.1782

[6] M. Gaidi, A. Amassian, M. Chaker, M. Kulishov and L. Martinu: Appl. Surf. Sci. Vol. 226 (2004), p.347

DOI: 10.1016/j.apsusc.2003.10.037

[7] J. E. Yoon, W. H. Cha, I. S. Lee, S. J. Kim and Y. G. Son: Surf. Coat. Tech. Vol. 203 (2008), p.638

[8] F. G. Zheng, J. P. Chen, X. W. Li and M. R. Shen: Mater. Lett. Vol. 59 (2005), p.3498

[9] J. Pak, S. Park, K. Nam and G. Park: Thin Solid Films Vol. 518 (2010), p.5642