Temperature Dependence of Raman Scattering in M-Plane GaN with Varying III/V Ratios

Cheng Chen; Xiang Ping Shu; Hua Yang Sun; Zhi Ren Qiu; Ting Wei Liang; Li Wei Tu; Zhe Chuan Feng

doi:10.4028/www.scientific.net/AMR.602-604.1453

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 602-604Temperature Dependence of Raman Scattering in...

Temperature Dependence of Raman Scattering in M-Plane GaN with Varying III/V Ratios

Abstract:

The temperature dependence Raman scattering from m-plane GaN thin films grown on m-plane sapphire substrate by Molecular Beam Epitaxy (MBE) has been investigated. Three pieces of m-plane GaN films grown with different Ⅲ/Ⅴ ratios were studied by confocal micro-Raman spectrometer from -180 °C to 240 °C. Raman shift and the full width at half maximum (FWHM) were fitted by lorentzian line shape, which reveal the quality and compressive stress of sample. It’s obvious that the Raman shift and FWHM exhibit a quadratic dependence on temperature, and that the redshift of Raman peak position with increasing temperature should be due to anharmonic coupling to phonons of other branches, volume expansion or lattice dilation. Comparing the experiment data and calculated results, the three-phonons processes are dominant in the redshift of E₁(LO) and E₂(high).

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Advanced Materials Research (Volumes 602-604)

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1453-1456

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.602-604.1453

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Online since:

December 2012

Authors:

Cheng Chen, Xiang Ping Shu, Hua Yang Sun, Zhi Ren Qiu, Ting Wei Liang, Li Wei Tu, Zhe Chuan Feng

Keywords:

MBE, M-Plane Gan, Raman Scattering, Temperature Dependence of Raman

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