High-Temperature Capacitive Mode Pressure Sensor Based on SiC

Hui Yong Yu; Hao Jie Lv; Wei Zhong Song; Zhi Bang Yang; Ming Hua Pang

doi:10.4028/www.scientific.net/AMR.605-607.1440

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High-Temperature Capacitive Mode Pressure Sensor Based on SiC
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 605-607High-Temperature Capacitive Mode Pressure Sensor...

High-Temperature Capacitive Mode Pressure Sensor Based on SiC

Abstract:

In order to realize high-accuracy pressure measurement in harsh environment, a new kind of Double-notches Touch Mode Capacitive Pressure Sensor (DTMCPS) based on SiC material is presented. Through research to material properties of the sensor, the sensor can be applied in high-temperature field. Using Finite Element Method (FEM) to simulate and solve capacitance, the results show that DTMCPS can immensely improve the sensitivity and the linear range of traditional single cavity sensor because of its double notches structure. Consequently, the sensor has outstanding measurement performance in high-temperature environment.

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Periodical:

Advanced Materials Research (Volumes 605-607)

Pages:

1440-1443

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.605-607.1440

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Online since:

December 2012

Authors:

Hui Yong Yu, Hao Jie Lv, Wei Zhong Song, Zhi Bang Yang, Ming Hua Pang

Keywords:

AIN, Finite Element Method (FEM), Silicon Carbide (SiC), Touch Mode Capacitive Pressure Sensor

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References

[1] G.L. Pearson, W.T. Read, Jr., and W.L. Feldman: Acta Met., Vol. 5 (1957), p.181

Google Scholar

[2] H.J. Lv, Q. Guo and G.Q. Hu: 3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems, Sanya, China (2008).

Google Scholar

[3] W.H. Ko and Q. Wang, Sensors and Actuators A, 75, 242 (1999).

Google Scholar

[4] Victor V. Luchinin, Andrey V. Korlyakov and Alexander A. Vasilev: The Symposium on Design, Test and Microfabrication of MEMS and MOEMS, Paris, France (1999)

Google Scholar

[5] H.J. Lv, G.Q. Hu, W. Zou, C.Y. Wu and Y.F. Chen: Optics and Precision Engineering, Vol. 18 (2010) No.5, P.1166. (In Chinese)

Google Scholar

[6] S. Timoshenko and S. Woinowsky-Kreger: Theory of Plates and Shells, 2nd Ed (MacGraw-Hill, New York 1959)

Google Scholar