Temperature Effect on the Sensitivity of a Highly Sensitive Micro-Machined Displacement Sensor

Tania Mukherjee; Tarun K. Bhattacharyya

doi:10.4028/www.scientific.net/AMR.622-623.1396

Paper Titles

Object Distance and Size Measurement Using Stereo Vision System
p.1373

The Design and Implementation of Ship Electric Field Measurement System Based on MSP430
p.1378

Localization Technology Basing Two-Dimensional Vector Sensor
p.1384

Structural Health Monitoring of Thin Aluminum Plate Using Acoustic Sensors
p.1389

Temperature Effect on the Sensitivity of a Highly Sensitive Micro-Machined Displacement Sensor
p.1396

An Alternative Method to Determine Measuring Instrument Fitness for Use
p.1401

Determining Blade Pitch Angle Sensitivity for PID Controller
p.1405

Dynamic Surface Tension of Ionic Liquid [C₁₀(EP_y)₂]Br₂ Using Maximum Bubble Pressure Method
p.1410

Development of Inspection System for Crack in R.C. Tunnel Lining by Using Knowledge-Based System (KBS)
p.1415

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 622-623Temperature Effect on the Sensitivity of a Highly...

Temperature Effect on the Sensitivity of a Highly Sensitive Micro-Machined Displacement Sensor

Abstract:

In this paper, a comparative study of temperature effect which introduces a thermionic current under a high applied electric field, on three different modes of field emission current, such as Tunneling current, Fowler-Nordheim current and Field emission current in between these two regions has been done. Moreover, an idea of micromechanical displacement sensor with high sensitivity, operating in Fowler-Nordheim current mode, has been proposed. The displacement sensitivity of proposed sensor in Fowler-Nordheim current domain is about 10-9 m/A. The displacement sensitivity has been shifted from its expected value due to thermal effect (at 700K temperature) at about 1010V/m applied electric field across tip gap.

You might also be interested in these eBooks

Manufacturing Science and Technology III

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 622-623)

Pages:

1396-1400

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.622-623.1396

Citation:

Cite this paper

Online since:

December 2012

Authors:

Tania Mukherjee, Tarun K. Bhattacharyya

Keywords:

Field Emission, MEMS, Sensor, Thermionic Emission, Tunneling Current

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] G. Binning and H. Rohrer, Scanning tunneling microscopy, IBM J. Res. Develop., vol. 30, p.355–369, (1986).

Google Scholar

[2] L. W. Nordheim and L. W. Nordheim, Proc. R. Soc. London, Ser. A 119, 173 , (1928).

Google Scholar

[3] Xin He, John Scharer, a_ John Booske, and Sean Sengele, One-dimensional combined field and thermionic emission model and comparison with experimental results, J. Vac. Sci. Technol. B, Vol. 26, No. 2, Mar/Apr (2008).

DOI: 10.1116/1.2884755

Google Scholar

[4] K.H. -L. Chauet al., An integrated force-balanced capacitive accelerometer for low-G. applications, " in Proc. Int. Conf. Solid-State Sensors Actuators, Transducers, 95, Stockholm, Sweden, June 1995, p.593–596.

DOI: 10.1109/sensor.1995.717294

Google Scholar

[5] K. J. Ma, N. Yazdi, and K. Najafi, A bulk-silicon capacitive microaccelerometer with built-in overrange and force-balance electrodes, in Proc. Tech. Dig., Solid-State Sensor Actuator Workshop, Hilton Head, SC, June 1994, p.160–163.

DOI: 10.31438/trf.hh1994.37

Google Scholar

[6] S. B. Waltmanand and W. J. Kaiser, An electron tunneling sensor, SensorsActuators, vol. 19, p.201–210, (1989).

Google Scholar