Ferroelectric Properties of Bismuth Titanate Ceramics by Tb3+,4+/V5+ Substitution

X.A. Mei; Rui Fang Liu; C.Q. Huang; J. Liu

doi:10.4028/www.scientific.net/AMR.624.150

Paper Titles

Preparation and Characterization of β-Eucryptite Glass Ceramics
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The Electrocaloric Effect of BaTiO₃ Ceramics Using Hydrothermal Synthesized Nano-Sized Starting Powders
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Property Improvement for Microwave Absorbing Slabs by Adding Conductive Grains
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Preparation and Properties of the Ferroelectric Materials Based on BIT
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Ferroelectric Properties of Bismuth Titanate Ceramics by Tb^3+,4+/V⁵⁺ Substitution
p.150

Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics by Sm³⁺ Substitution
p.154

Ferroelectric Properties of Bismuth Titanate Ceramics by Er³⁺/V⁵⁺ Substitution
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Current-Voltage and Ferroelectric Characteristics of Er₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
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Dielectric and Ferroelectric Properties of Bi_2.9Pr_0.9Ti_2.97V_0.03O₁₂
p.166

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 624Ferroelectric Properties of Bismuth Titanate...

Ferroelectric Properties of Bismuth Titanate Ceramics by Tb^3+,4+/V⁵⁺ Substitution

Abstract:

The Ferroelectric properties and Microstructures of Bi_3.3Tb_0.6Ti₃O₁₂ (BTT) and Bi_3.3Tb_0.6Ti_2.97V_0.03O₁₂ (BTTV) ceramics prepared at 1100°C by a conventional ceramic technique were investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BTT ceramics are 23µC/cm2 and 80kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BTTV ceramics up to 35μC/cm², which is larger than that of the BTT ceramics. Therefore, co-sustitution of Tb and V in Bi₄Ti₃O₁₂ (BIT) ceramic is effective for the improvement of its ferroelectricity.

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Advanced Materials Research (Volume 624)

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150-153

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https://doi.org/10.4028/www.scientific.net/AMR.624.150

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Online since:

December 2012

Authors:

X.A. Mei, Rui Fang Liu, C.Q. Huang, J. Liu

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Ceramic, Dielectric, Doping, Ferroelectric, Microstructure

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References

[1] J. F. Scott, C. A. P. De Araujo, Ferroelectric memories. Science. 246 (1998) 1400-1404.

Google Scholar

[2] H. Uchida, H. Yoshikawa, I. Okada, Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution,Appl. Phys. Lett. 81 (2002) 2229-2233.

DOI: 10.1063/1.1507839

Google Scholar

[3] B. H. Park, B. S. Kang, S. D. Bu, Lanthanum-substituted bismuth titanate for use in non-volatile memories, Nature. 401 (1999) 682-686.

DOI: 10.1038/44352

Google Scholar

[4] T. Kojima, T. Sakai, T, Watanabe, large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 80 (2002) 2746-2750.

DOI: 10.1063/1.1468914

Google Scholar

[5] M. Chen, Z. L. Liu, Y. Wang, Electrical characteristics and microstructures of Sm2O3-doped Bi4Ti3O12, Chinese Physics Letters. 21(2004) 1181-1185.

Google Scholar

[6] Y. C. Chang, D. H. Kuo: The improvement in ferroelectric performance of (Bi3.15Nd0.85) 4Ti3O12 films By the addition of hydrogen peroxide in a spin-coating solution, Thin Solid Films. 515(2006), 1683-1687.

DOI: 10.1016/j.tsf.2006.06.024

Google Scholar

[7] U. Chon, K. B. Kim, H. M. Jang, Fatigue-free samarium-modified bismuth titanate (Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations, Appl. Phys. Lett.79 (2001) 3137-3141.

DOI: 10.1063/1.1415353

Google Scholar