Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics by Sm3+ Substitution

Min Chen; X.A. Mei; Rui Fang Liu; C.Q. Huang; J. Liu

doi:10.4028/www.scientific.net/AMR.624.154

Paper Titles

The Electrocaloric Effect of BaTiO₃ Ceramics Using Hydrothermal Synthesized Nano-Sized Starting Powders
p.138

Property Improvement for Microwave Absorbing Slabs by Adding Conductive Grains
p.142

Preparation and Properties of the Ferroelectric Materials Based on BIT
p.146

Ferroelectric Properties of Bismuth Titanate Ceramics by Tb^3+,4+/V⁵⁺ Substitution
p.150

Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics by Sm³⁺ Substitution
p.154

Ferroelectric Properties of Bismuth Titanate Ceramics by Er³⁺/V⁵⁺ Substitution
p.158

Current-Voltage and Ferroelectric Characteristics of Er₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.162

Dielectric and Ferroelectric Properties of Bi_2.9Pr_0.9Ti_2.97V_0.03O₁₂
p.166

Fatigue and Ferroelectric Properties of Bi_3.25Gd_0.75Ti_2.97V_0.03O₁₂
p.170

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 624Electrical Characteristics and Microstructures of...

Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics by Sm³⁺ Substitution

Abstract:

The electrical properties of Sm-doped bismuth titanate，Bi_4-xSm_xTi₃O₁₂ (BST) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. The P-V hysteresis loops of samples with x=0.4 and 1.2 were characterized by large leakage current, whereas for samples with x=0.6 and 0.8 the P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization ( Pr ) and coercive field (Ec) of the BST ceramic with x=0.8 were above 20μC/cm² and 60KV/cm , respectively.

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Advanced Materials Research (Volume 624)

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154-157

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https://doi.org/10.4028/www.scientific.net/AMR.624.154

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December 2012

Authors:

Min Chen, X.A. Mei, Rui Fang Liu, C.Q. Huang, J. Liu

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Bismuth Titanate, Doping, Ferroelectric, Film

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References

[1] J. F. Scott, C. A. P. De Araujo, Ferroelectric memories, Science. 246 (1998) 1400-1404.

Google Scholar

[2] C. A. P. Dc Araujo, J. D. Cuchiare, L. D. Mc Millan, et al: Fatigue-free ferroelectric capacitors, Nature. 374 (1995) 627-631.

Google Scholar

[3] B. H. Park, B. S. Kang, S. D. Bu, et al: Lanthanum-substituted bismuth titanate for use in non-volatile memories, Nature. 401 (1999) 682-686.

DOI: 10.1038/44352

Google Scholar

[4] H. N. Lee, D. Hesse, N. Zakharov, et al: Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates, Science. 296 (2002) 2006-2010.

Google Scholar

[5] T. Watanabe, H. Funakubo, M. Osada, et al: Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition, Appl. Phys. Lett. 80 (2002) 2229-2233.

DOI: 10.1063/1.1430267

Google Scholar

[6] T. Kojima, T. Sakai, T, Watanabe, et al: large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition, Appl. Phys. Lett. 80 (2002) 2746-2750.

DOI: 10.1063/1.1468914

Google Scholar

[7] H. Uchida, H. Yoshikawa, I. Okada, et al: Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution, Appl. Phys. Lett. 81 (2002) 2229-2233.

DOI: 10.1063/1.1507839

Google Scholar

[8] U. Chon, K. B. Kim, H. M. Jang, et al: Fatigue-free samarium-modified bismuth titanate(Bi4-xSmxTi3O12) film capacitors having large spontaneous polarizations, Appl. Phys. Lett. 79 (2001) 3137-3141.

DOI: 10.1063/1.1415353

Google Scholar

[9] A. Z. Simoes, C. Quinelato, A. Ries, et al: Preparation of Lanthanum doped Bi4Ti3O12 eceramics by the polymeric precursor method, Mater. Chemistry and Phys. 98 (2006) 481-485.

DOI: 10.1016/j.matchemphys.2005.09.070

Google Scholar

[10] D. Wu, A. D. Li, N. B. Ming, Dielectric characterization of Bi3.25La0.75Ti3O12 thin films, Appl. Phys. Lett. 84 (2004) 4505-4509.

Google Scholar