Dielectric and Ferroelectric Properties of Bi_2.9Pr_0.9Ti_2.97V_0.03O₁₂

Abstract:

Bi_2.9Pr_0.9Ti_2.97V_0.03O₁₂ (BPTV) ceramics were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. BPTV caused a large shift of the Curie temperature ( TC ) of Bi₄Ti₃O₁₂ (BIT) from 675°C to 385°C. The remanent polarization and the coercive field of the BLTV were 31μC/cm² and 60kV/cm at an electric field of 100kV/cm, respectively. Furthermore, the dielectric permittivity and dissipation factor were 300 and 3.3×10-3 at 1MHz, at 1V and at room temperature, respectively. These ferroelectric properties of BPTV are superior to V-doped Bi₄Ti₃O₁₂ (~20μC/cm² and 80kV/cm) and (Sr, Ta)-doped Bi₄Ti₃O₁₂ (~12μC/cm² and 71kV/cm) ceramics. In addition, the dense ceramics of BPTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi₂Ta₂O₉ system.

• Periodical: Advanced Materials Research (Volume 624)
• Pages: 166-169
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.624.166
• Online since: December 2012
• Authors: J.G. Liu, X.A. Mei, C.Q. Huang, J. Liu
• Keywords: Ceramic, Dielectric, Doping, Ferroelectric

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