Electrical Characterization and Microstructures of Bi3.25Er0.75Ti3O12 and Bi2.9Er0.75Ti2.97V0.03O12 Thin Films

C.Q. Huang; J.G. Liu; X.A. Mei; J. Liu

doi:10.4028/www.scientific.net/AMR.624.178

Paper Titles

Current-Voltage and Ferroelectric Characteristics of Er₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.162

Dielectric and Ferroelectric Properties of Bi_2.9Pr_0.9Ti_2.97V_0.03O₁₂
p.166

Fatigue and Ferroelectric Properties of Bi_3.25Gd_0.75Ti_2.97V_0.03O₁₂
p.170

Impedance Spectra and Ferroelectric Properties of Bismuth Titanate Ceramics by Nd³⁺/V⁵⁺ Substitution
p.174

Electrical Characterization and Microstructures of Bi_3.25Er_0.75Ti₃O₁₂ and Bi_2.9Er_0.75Ti_2.97V_0.03O₁₂ Thin Films
p.178

Electrical Characteristics and Impedance Spectra of Gd₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.182

The Effect of Pore-Formers on the Performance of YSZ/NiO Composite Material
p.186

Preparation and Conductivity Properties of Ta⁵⁺ Doping BaCeO₃ Ceramics
p.190

Crystallization and Photocatalytic-Activity of TiO₂ Doped with Metal Ions Prepared by Adsorption Phase Synthesis
p.194

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 624Electrical Characterization and Microstructures of...

Electrical Characterization and Microstructures of Bi_3.25Er_0.75Ti₃O₁₂ and Bi_2.9Er_0.75Ti_2.97V_0.03O₁₂ Thin Films

Abstract:

Bi_3.25Er_0.75Ti₃O₁₂(BET) and Bi_3.25Er_0.75Ti_2.97V_0.03O₁₂(BETV) thin films with random orientation were fabricated on Pt/Ti/SiO₂/Si substrates by rf magnetron sputtering technique. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed rod-like grains with random orientation. The experimental results indicated that Er doping into Bi₄Ti₃O₁₂ (BIT) also result in a remarkable improvement in ferroelectric property. The remanent polarization (Pr) and coercive field (Ec) of the BET film were 17 μC/cm² and 80 kV/cm, respectively. Furthermore, V substitution improves the Er value of the BETV films up to 28 μC/cm², which is much larger than that of the BET film.

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Advanced Materials Research (Volume 624)

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178-181

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https://doi.org/10.4028/www.scientific.net/AMR.624.178

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December 2012

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C.Q. Huang, J.G. Liu, X.A. Mei, J. Liu

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Dielectric, Ferroelectric, Film

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