Electrical Characteristics and Impedance Spectra of Gd2O3-Doped Bi4Ti3O12 Ceramics

X.B. Liu; X.A. Mei; C.Q. Huang; J. Liu

doi:10.4028/www.scientific.net/AMR.624.182

Paper Titles

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 624Electrical Characteristics and Impedance Spectra...

Electrical Characteristics and Impedance Spectra of Gd₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics

Abstract:

The electrical properties of Gd₂O₃-bismuth titanate (Bi_4-xGd_xTi₃O₁₂) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a simple ohmic behavior. The impedance spectrum of Gd-doped sample indicates that consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi₄Ti₃O₁₂ and the distribution of every element is uniform. Gd-doped sample exhibit randomly oriented and plate-like morphology.

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Advanced Materials Research (Volume 624)

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182-185

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https://doi.org/10.4028/www.scientific.net/AMR.624.182

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December 2012

Authors:

X.B. Liu, X.A. Mei, C.Q. Huang, J. Liu

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Bismuth Titanate, Electrical Properties, Impedance, Microstructure

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