Fatigue and Ferroelectric Properties of Bi3.25Gd0.75Ti2.97V0.03O12

J.G. Liu; X.A. Mei; C.Q. Huang; J. Liu

doi:10.4028/www.scientific.net/AMR.624.170

Paper Titles

Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics by Sm³⁺ Substitution
p.154

Ferroelectric Properties of Bismuth Titanate Ceramics by Er³⁺/V⁵⁺ Substitution
p.158

Current-Voltage and Ferroelectric Characteristics of Er₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.162

Dielectric and Ferroelectric Properties of Bi_2.9Pr_0.9Ti_2.97V_0.03O₁₂
p.166

Fatigue and Ferroelectric Properties of Bi_3.25Gd_0.75Ti_2.97V_0.03O₁₂
p.170

Impedance Spectra and Ferroelectric Properties of Bismuth Titanate Ceramics by Nd³⁺/V⁵⁺ Substitution
p.174

Electrical Characterization and Microstructures of Bi_3.25Er_0.75Ti₃O₁₂ and Bi_2.9Er_0.75Ti_2.97V_0.03O₁₂ Thin Films
p.178

Electrical Characteristics and Impedance Spectra of Gd₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.182

The Effect of Pore-Formers on the Performance of YSZ/NiO Composite Material
p.186

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 624Fatigue and Ferroelectric Properties of...

Fatigue and Ferroelectric Properties of Bi_3.25Gd_0.75Ti_2.97V_0.03O₁₂

Abstract:

Bi_3.25Gd_0.75Ti_2.97V_0.03O₁₂ (BGTV) ceramics were prepared by solid state reaction. These samples had polycrystalline Bi-layered perovskite structure without preferred orientation, and consisted of well developed plate-like grains with random orientation. The remanent polarization and the coercive field of the BGTV were 24μC/cm² and 65kV/cm at an electric field of 100kV/cm, respectively. These ferroelectric properties of BGTV are superior to V-doped Bi₄Ti₃O₁₂ (~20μC/cm² and 80kV/cm) and (Sr, Ta)-doped Bi₄Ti₃O₁₂ (~12μC/cm² and 71kV/cm) ceramics. In addition, the dense ceramics of BGTV could be obtained by sintering at temperatures 100─200°C lower than those of the SrBi₂Ta₂O₉ system.

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Advanced Materials Research (Volume 624)

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170-173

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https://doi.org/10.4028/www.scientific.net/AMR.624.170

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Online since:

December 2012

Authors:

J.G. Liu, X.A. Mei, C.Q. Huang, J. Liu

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Ceramic, Dielectric, Doping, Ferroelectric

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