Ferroelectric Properties of Bismuth Titanate Ceramics by Er3+/V5+ Substitution

Rui Fang Liu; M.B. Sun; W.P. Ding; X.A. Mei

doi:10.4028/www.scientific.net/AMR.624.158

Paper Titles

Property Improvement for Microwave Absorbing Slabs by Adding Conductive Grains
p.142

Preparation and Properties of the Ferroelectric Materials Based on BIT
p.146

Ferroelectric Properties of Bismuth Titanate Ceramics by Tb^3+,4+/V⁵⁺ Substitution
p.150

Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics by Sm³⁺ Substitution
p.154

Ferroelectric Properties of Bismuth Titanate Ceramics by Er³⁺/V⁵⁺ Substitution
p.158

Current-Voltage and Ferroelectric Characteristics of Er₂O₃-Doped Bi₄Ti₃O₁₂ Ceramics
p.162

Dielectric and Ferroelectric Properties of Bi_2.9Pr_0.9Ti_2.97V_0.03O₁₂
p.166

Fatigue and Ferroelectric Properties of Bi_3.25Gd_0.75Ti_2.97V_0.03O₁₂
p.170

Impedance Spectra and Ferroelectric Properties of Bismuth Titanate Ceramics by Nd³⁺/V⁵⁺ Substitution
p.174

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 624Ferroelectric Properties of Bismuth Titanate...

Ferroelectric Properties of Bismuth Titanate Ceramics by Er³⁺/V⁵⁺ Substitution

Abstract:

The ferroelectricity of Bi_3.2Er_0.8Ti₃O₁₂ (BET), and Bi_3.2Er_0.8Ti_2.97V_0.03O₁₂ (BETV) ceramics prepared at 1100°C by a conventional ceramic technique was investigated. These ceramics possess random-oriented polycrystalline structure. The remanent polarization (Pr) and coercive field (Ec) of the BET ceramics are 18 µC/cm² and 64kV/cm, respectively. Furthermore, V substitution improves the Pr value of the BETV ceramics up to 30 μC/cm², which is much larger than that of the BET ceramics. Therefore, co-sustitution of Er and V in Bi₄Ti₃O₁₂ (BIT) ceramic is effective for the improvement of its ferroelectricity.

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Periodical:

Advanced Materials Research (Volume 624)

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158-161

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.624.158

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Online since:

December 2012

Authors:

Rui Fang Liu, M.B. Sun, W.P. Ding, X.A. Mei

Keywords:

Ceramic, Dielectric, Doping, Ferroelectric, Microstructure

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