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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 629Intrinsic Ferromagnetism of the GaMnN Thin Films

Intrinsic Ferromagnetism of the GaMnN Thin Films

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Abstract:

The Mn-doped GaN (GaMnN) films on c-plane sapphire substrates were prepared by using Laser Molecular Beam Epitaxy (LMBE) at different base nitrogen pressure, followed by annealing in the ammonia atmosphere at 950 °C for 30 min, to study the original reason of the room-temperature ferromagnetism of GaMnN films. We found the crystalline quality was sensitive to the base nitrogen pressure during growth. X-ray photoelectron spectra (XPS) analysis confirmed that the Mn³⁺ and Mn²⁺ coexist in our samples. The room-temperature ferromagnetic behavior can be explained by double exchange. The ferromagnetism would be weakened by the nitrogen vacancies, which plays a role of donor.

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Periodical:

Advanced Materials Research (Volume 629)

Pages:

49-54

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.629.49

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Online since:

December 2012

Authors:

Xing Guo Gao, Bao Yuan Man, Mei Liu, Cheng Yang, Chuan Song Chen, Zhen Cui Sun, Shi Cai Xu

Keywords:

Ferromagnetism, GaMnN, LMBE, Thin Film

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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