Theoretical Study on Recombination Efficiency at S-DPVBi/Alq3 Interface in OLED

Young Wook Hwang; Kwang Sik Kim; Tae Young Won

doi:10.4028/www.scientific.net/AMR.629.44

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 629Theoretical Study on Recombination Efficiency at...

Theoretical Study on Recombination Efficiency at S-DPVBi/Alq3 Interface in OLED

Abstract:

In this paper, we report our numerical study on the electrical-optical properties of the organic light emitting diodes (OLEDs) devices with n-doped layer, which is inserted in an effort to reduce the interface barrier between the cathode and the ETL(electron transport layer). In order to anlayze the electrical and optical characteristics such as the transport behavior of carriers, recombination kinetics, and emission property, we undertake the finite element method (FEM) in OLEDs. Our model includes Poisson’s equation, continuity equation to account for behavior of electrons and holes and the exciton continuity/transfer equation to account for recombination of carriers. We employ the multilayer structure that consists of indium tin oxide (ITO); 2, 2’, 7, 7’ –tetrakis (N, N-diphenylamine) - 9, 9’- spirobi-fluorene (S-TAD); 4, 4’- bis (2,2’- diphenylvinyl) - 1,1’- spirobiphenyl (S-DPVBi); tris (8-quinolinolato) aluminium (Alq3); calsium(Ca).

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Periodical:

Advanced Materials Research (Volume 629)

Pages:

44-48

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.629.44

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Online since:

December 2012

Authors:

Young Wook Hwang, Kwang Sik Kim, Tae Young Won

Keywords:

Finite Element Method (FEM), Multilayer, Numerical Model, OLED

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References

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