Theoretical Modification on Optic Properties for Transmission-Mode GaAs Photocathode Module

Ya Juan Xiong; Jing Zhao; Ben Kang Chang

doi:10.4028/www.scientific.net/AMR.631-632.181

Paper Titles

Negative Electron Affinity AlGaAs/GaAs Photocathodes with Exponential-Doping Structure
p.160

Investigation into Cu-Interlayered Diffusion Bonding Trial of AZ31B Alloy
p.167

Characteristics of the Transfer Film and Tribological Properties of Oxide/PTFE Composites
p.172

Photocatalytic Oxidation of Arsenic(III) by Hydrothermal Synthesized TiO₂ Loaded on Activated Carbon Fiber
p.176

Theoretical Modification on Optic Properties for Transmission-Mode GaAs Photocathode Module
p.181

Nitrogen Concentrations on Structural and Optical Properties of Aluminum Nitride Films Deposited by Reactive RF-Magnetron Sputtering
p.186

Evaluation of the Susceptibility to Intergranular Corrosion for a Novel Cr-Mn-N Austenitic Stainless Steel Using DL-EPR
p.192

Effects of Rolling Resistance on Shear Behavior and Anisotropy of Granular Matters
p.198

Comparative Study of Different Source of Silica-Filled Epoxy Resin
p.205

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 631-632Theoretical Modification on Optic Properties for...

Theoretical Modification on Optic Properties for Transmission-Mode GaAs Photocathode Module

Abstract:

To explore the optic properties of transmission-mode GaAs photocathode module, experimental and theoretical values of reflectance and transmittance of photocathode module has been compared. it showns that experemental curves cannot tally with theoretical curves completely. The variation range of initial values of thickness is firstly setted. Modifing transmittance formula by a fitting coefficient A, optical properties is fitted using the method of error control. R-T combined error reduced from 15.2% to 4.9% using R-T combined error control scheme. Optimal fitting values of thickness of photocathode module are obtained, which are d₁ = 110 nm, d₂ = 1019 nm, d₃ = 1491 nm. And the error of total thickness is 2.9%.

You might also be interested in these eBooks

Materials Engineering for Advanced Technologies (ICMEAT 2012)

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 631-632)

Pages:

181-185

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.631-632.181

Citation:

Cite this paper

Online since:

January 2013

Authors:

Ya Juan Xiong, Jing Zhao, Ben Kang Chang

Keywords:

Error Control, Optical Properties Fitting, Optoelectronics, Transmission-Mode GaAs Photocathode Module

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] D. A. Orlov, M. Hoppe, Energy distributions of electrons emitted from GaAs(Cs, O), Appl. Phys. Lett. 78(18) (2001) 2721~2723.

DOI: 10.1063/1.1368376

Google Scholar

[2] Du Xiaoqing, Chang Benkang, Measurement and analysis of response characteristic of transmission-mode GaAs photocathode before and after indium seal, Acta Optica Sinica, 26(4) (2006) 538~540 (in Chinese).

Google Scholar

[3] Y. Sun, R. E. Kirby, The surface activation layer of GaAs negative electron affinity photocathode activated by Cs, Li, and NF3, Appl. Phys. Lett. 95 (17) (2009) 174109-1~3.

DOI: 10.1063/1.3257730

Google Scholar

[4] Ö. Faruk Farsakoğlu, D. Mehmet Zengin, Determination of some main parameters for quantum values of GaAlAs/GaAs transmission-mode photocathodes in near-ir region, Opt. Eng. 32 (5) (1993) 1105~1113.

DOI: 10.1117/12.130264

Google Scholar

[5] Zou Ji-Jun, Chang Ben-Kang, Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes, Acta Physica Sinac. 56 (5) (2007) 2992~2997 (in Chinese).

DOI: 10.7498/aps.60.067301

Google Scholar

[6] Zhang Yi-Jun, Niu Jun, Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes, Acta Physica Sinaca. 60 (6) (2011) 067301-1~6 (in Chinese).

DOI: 10.7498/aps.60.067301

Google Scholar

[7] Du Xiaoqing, Chang Benkang. Influence of material performance parameters of GaAs/AlGaAs photoemission, Proc. SPIE. 5280 (2004) 595~702.

Google Scholar

[8] W. E. Spicer, A. Herrera-Gómez, Modern theory applications of photocathodes, Proc. SPIE. 2022 ( 1993) 18~33.

Google Scholar

[9] Tang Jinfa, Gu peifu, Liu Xu, Modern optical thin film technology, China, (2006).

Google Scholar

[10] D. E. Aspnes, S. M. Kelso, Optical properties of AlxGa1-xAs, J. Appl. Phys. 60 (2) (1986) 754~767.

Google Scholar

[11] Zhao Jing, Chang Ben-Kang, Spectral transmittance and module structure fitting for transmission-mode GaAs photocathodes, Chin. Phys. B. 20 (4) (2011) 047801-1~7.

DOI: 10.1088/1674-1056/20/4/047801

Google Scholar