Improved Dark Current Properties in Bi-Layer Structured Organic Photodetectors

Naoki Ohtani; Shouta Majima

doi:10.4028/www.scientific.net/AMR.650.54

Paper Titles

Analysis of Nanocrystal of Porous Silicon with High-Resolution Transmission Electron Microscopy
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Influence of Particle Size of TiO₂ Powder on the Energy Conversion Efficiency of a Dye-Sensitized Solar Cell
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Production of Highly Efficient Photocatalytic TiO₂Powders by Mechanical Ball Milling
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Fast Detection of Local Anesthetic Ropivacaine by Impedance Method on Polypyrrole-Graphene Oxide
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Improved Dark Current Properties in Bi-Layer Structured Organic Photodetectors
p.54

Preparation of β-Phase Silicon Nitride Powders
p.58

The Focus of Beam Using Optical Transformation
p.61

The Nature of Rest Silanol Groups on the Surfaces of Silica Based Solid Phase Extraction Materials
p.66

Simulation of the Hydrogen Permeation Behavior of X80 Pipeline Steels in H₂S Saturated Environment by Cathodic-Charging Method
p.72

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 650Improved Dark Current Properties in Bi-Layer...

Improved Dark Current Properties in Bi-Layer Structured Organic Photodetectors

Abstract:

Organic photodiodes operating in the near-infrared (NIR) region with an operating wavelength of about 850 nm, which corresponds to GaAs-based optical devices, were fabricated by wet process. In the active layer, Copper(II)5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine was used as NIR absorption material. A wide-bandgap polymer was doped to decrease the dark current, and an n-type organic semiconductor was doped to increase optical sensitivity. To decrease the dark current further, an electron-blocking layer was added onto the anode. This bi-layer structure was found to be very useful for decreasing the dark current. We also evaluated the on/off ratio, which is very important for application to optical communication devices.