Study of the Electrical Properties of Monolayer MoS2 Semiconductor

Xi Ying Ma

doi:10.4028/www.scientific.net/AMR.651.193

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 651Study of the Electrical Properties of Monolayer...

Study of the Electrical Properties of Monolayer MoS₂ Semiconductor

Abstract:

We present the study of the electrical properties of monolayer MoS₂ in terms of semiconductor theory. The free electron and hole concentrations formulas in two-dimensional (2D) semiconductors have been developed based on three-dimensional (3D) semiconductors theory, and derived the intrinsic carrier concentration equation of 2D system. Using these equations, we simulated the intrinsic carrier concentration in monolayer MoS₂ with temperature. The intrinsic carrier density in monolayer MoS₂ increases exponentially with temperature, but it lows a few orders of magnitude than that of 3D semiconductor. It means that monolayer MoS₂ based devices can operated at very high temperatures. Accordingly, the conductivity and resistivity were simulated for 2D MoS₂, the former increases exponentially while the latter decreases with temperature or carrier concentration.

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Periodical:

Advanced Materials Research (Volume 651)

Pages:

193-197

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.651.193

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Online since:

January 2013

Authors:

Xi Ying Ma

Keywords:

Carrier Concentration, Electrical Conductivity, Electrical Properties, Electrical Resistivity, Monolayer MoS₂

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