Electrical, Optical and Structural Properties of Tin Oxide Thin Films Deposited by APCVD

K. Lagha-Menouer; M.S. Belkaid; M. Pasquinelli

doi:10.4028/www.scientific.net/AMR.651.38

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 651Electrical, Optical and Structural Properties of...

Electrical, Optical and Structural Properties of Tin Oxide Thin Films Deposited by APCVD

Abstract:

Tin oxide SnO2 thin films are deposited by atmospheric pressure chemical vapor deposition APCVD technique. The electrical properties of the deposited films and the influence of the temperature ranging from room temperature to 500°C are analyzed by Hall measurement technique. The negative value of the hall constant indicates that the obtained tin oxide thin films are an N type semiconductor. The value of the mobility and the carrier concentration are 21 cm²/ V. sec and 1,50. 1020 cm-3 respectively. These films present an optical reflectance less than 20%.The change of the surface morphology due to the heat treatment is characterized by the scanning electronic microscopy SEM and the transmission electronic microscopy TEM. The films have a polycrystalline aspect. A post annealing at 500°C improves their morphology.

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Periodical:

Advanced Materials Research (Volume 651)

Pages:

38-41

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.651.38

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Online since:

January 2013

Authors:

K. Lagha-Menouer, M.S. Belkaid, M. Pasquinelli

Keywords:

Annealing, Carrier Concentration, Mobility, Reflectance, SEM, TEM, Thin Film, TiN Oxide

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References

[1] T. Tesfamichael, A. Roos, Treatment of antireflection on tin oxide coated anodized aluminium selective absorber surface, Solar Energy Materials and Solar Cells 54 (1998) 213-221.

DOI: 10.1016/s0927-0248(98)00073-7

Google Scholar

[2] A.A. Yadav, E.U. Masumdar, Electrical and optical properties SnO2: F thin films: Effect of the substrate temperature, J of Alloys and Compounds 488 (2009) 350-355.

DOI: 10.1016/j.jallcom.2009.08.130

Google Scholar

[3] H.L. Ma, D.H. Zhang , Electrical and optical propertiesof F-doped textured SnO2 films deposited by APCVD. Solar Energy Materials and solar cells 40 (1996) 371- 380.

DOI: 10.1016/0927-0248(95)00161-1

Google Scholar

[4] M. Mwaamburi, E. Wïcklgard, Doped tin oxide coated aluminium solar selective reflector surfaces, Solar Energy, 68 (2000) 371-378.

DOI: 10.1016/s0038-092x(00)00030-x

Google Scholar

[5] S. Suh, Z. Zhang, Atmospheric-pressure chemical vapor deposition of fluorine-doped tin oxide thin films, Thin solid films 345 (1999) 240-243.

DOI: 10.1016/s0040-6090(98)01421-7

Google Scholar