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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 662Growth and Photoluminescence of β-SiC Nanowires on...

Growth and Photoluminescence of β-SiC Nanowires on Porous Silicon Array

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Abstract:

Nonaligned and curly β-SiC nanowires (nw-SiC) were grown on porous silicon array (PSA) by a chemical vapor deposition method with nickel as the catalyst. The morphology, structure and the composition of the nw-SiC/PSA and the SiC-SiO₂ core-shell fibers which is the semi-product were characterized by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Based on the experimental results a possible growth mechanism of nw-SiC was explained. Two broad photoluminescence peaks located around ~409 and ~494 nm were observed in nw-SiC/PSA in the PL measurement when utilizing 300 nm ultraviolet fluorescent light excited at room temperature. The excellent luminescent performances are ascribed to the quantum confinement effects in nw-SiC. The optical merits of nw-SiC/PSA made it a promising material in the fields of ultraviolet-blue emitting devices.

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Periodical:

Advanced Materials Research (Volume 662)

Pages:

11-15

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.662.11

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Online since:

February 2013

Authors:

Hai Yan Wang, Li Ping Kang, Yong Qiang Wang, Zi Jiong Li

Keywords:

Photoluminescence (PL), Porous Silicon Array, β-SiC Nanowires

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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