Characterization of Rapid Thermal and Micro-Wave Annealed Germanium Thin Films Grown by E-Beam Evaporation on Glass Substrates

Li Te Tsou; Sheng Hao Chen; Huai Yi Chen; Yao Jen Lee; Horng Show Koo; Chiung Hui Lai

doi:10.4028/www.scientific.net/AMR.663.431

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 663Characterization of Rapid Thermal and Micro-Wave...

Characterization of Rapid Thermal and Micro-Wave Annealed Germanium Thin Films Grown by E-Beam Evaporation on Glass Substrates

Abstract:

In this paper, we used the electron beam (e-beam) evaporation to deposit Ge thin film on glass, and used microwave annealing (MWA) system of 5.8 GHz frequency for thin film crystallization. Then, we compared the MWA experiment results of sample sheet resistance (Rs), crystallization strength and cross section with those using traditional rapid thermal annealing (RTA) equipment. We found that MWA can get poly-Ge thin film with (111), (220) and (311) crystallization directions and optimal Rs at a temperature of about 450 ° C without affecting the film thickness. By comparison, RTA equipment can only reduce the sample Rs at least temperature of 550oC.

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Periodical:

Advanced Materials Research (Volume 663)

Pages:

431-435

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.663.431

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Online since:

February 2013

Authors:

Li Te Tsou, Sheng Hao Chen, Huai Yi Chen, Yao Jen Lee, Horng Show Koo, Chiung Hui Lai

Keywords:

Amorphous Germanium (a-Ge) Thin Film, Electron Beam (e-Beam) Evaporation, Microwave Annealing (MWA), Poly-Germanium (poly-Ge) Thin Film, Rapid Thermal Annealing (RTA), Sheet Resistance

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