Ion-Beam Synthesis of InSb Nanocrystals in Si Matrix

Fadey F. Komarov; Altynay Togambayeva; Ludmila Vlasukova; Irina Parkhomenko; Oleg Milchanin; Maksim Makhavikov; Murat Tolkynay

doi:10.4028/www.scientific.net/AMR.679.9

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 679Ion-Beam Synthesis of InSb Nanocrystals in Si...

Ion-Beam Synthesis of InSb Nanocrystals in Si Matrix

Abstract:

The results of structural and optical investigation of crystalline Si with embedded InSb nanocrystals are reported. These nanocrystals were synthesized in silicon matrix by means of high-fluence “hot” implantation of Sb and In ions followed by thermal treatment. TEM gives an evidence of nanocrystal formation in implanted and annealed samples as well as an existence of microtwins and dislocation-type defects and substantial residual mechanical strains. We have identified nanocrystals as InSb from RS data. Mechanical strains in “silicon – InSb nanocrystals” system have been evaluated, too.

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Periodical:

Advanced Materials Research (Volume 679)

Pages:

9-13

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.679.9

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Online since:

April 2013

Authors:

Fadey F. Komarov, Altynay Togambayeva, Ludmila Vlasukova, Irina Parkhomenko, Oleg Milchanin, Maksim Makhavikov, Murat Tolkynay

Keywords:

High-Fluence Ion Annealing, High-Fluence Ion Implantation, InSb Nanocrystals in Si, Optical Properties of Implanted Layer, Structural Properties of Implanted Layer

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