Characterization of Metal-Semiconductor Schottky Diodes and Application on THz Detection

Abstract:

This paper presents a kind of air-bridged GaAs Schottky diodes which offer ultra low parasitic capacitance and series resistance in millimeter and THz wavelength. The Schottky barrier diodes have several advantages when used as millimeter wave and terahertz video, or power detectors. These include their fast time response, room temperature operation, simple structure and low cost. This paper describes the characterization of the metal-semiconductor Schottky diodes including principle, diode structure, non-linear voltage-current characteristic and signal-rectifying performance. For application, a quasi-optical THz detector was made by using the proposed Schottky diodes. It utilized a hyper hemispherical silicon lens to coupleand THz radiation to the diodes by integrating on a broadband planar bow-tie antenna. The measurement results of the Schottky diode based detector show a good room temperature performance.

• Periodical: Advanced Materials Research (Volume 683)
• Pages: 729-732
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.683.729
• Online since: April 2013
• Authors: Hai Rui Liu, Jun Sheng Yu
• Keywords: Detection, Meta-Semiconductor, Millimeter Wave, Planar Schottky Diode, THz

References

[1] S. Yeom, D. Lee, J. Son, and V. P. Guschin, Distance estimation of concealed objects with stereoscopic passive millimetre-wave imaging, Progress In Electromagnetics Research Vol. 115, 399-407, (2011).

DOI: 10.2528/pier11030307

[2] B. Zhang, Y. Fan, Z. Chen, X. F. Yang and F. Q. Zhong, An Improved 110-130-GHz Fix-Tuned Subharmonic Mixer with Compact Microstrip Resonant Cell Struture., Journal of Electromagnetic Waves and Applications, Vol. 25, 411-420, (2011).

DOI: 10.1163/156939311794362830

[3] Information on CD detector series from Farran Technology, www. Farran. com.

[4] J. Gonzales, M. A. Gritz, C. Fumeaux, and G. D. Boreman, Two dimensional array of antenna-coupled microbolometers, Int. J. Infrared Millimeter Waves, 23, pp.785-797 (2002).

DOI: 10.1023/a:1015722821951

[5] Information on http: /www. tydex. ru/products/thz_optics/golay_cell.

[6] J. L. Hesler and T. W. Crowe, NEP and responsivity of THz zero-bias Schottky diode detectors, Proc. Joint 32nd Int. Conf. Infrared Millimeter Waves and 15th Int. Conf. Terahertz Electronics. p.844 – 845 (2007).

DOI: 10.1109/icimw.2007.4516758

[7] D. Schoenherr, C. Bleasdale, T. Goebel, C. Sydlo, Extremely Broadband Characterization of a Schottky Diode Based THz Detector, , Proc. 35th Int. Conf. Infrared Millimeter Terahertz Waves, pp.1-2 (2010).

DOI: 10.1109/icimw.2010.5613008

[8] A. Semenov, O. Cojocari, Application of Zero-Bias Quasi-Optical Schottky-Diode Detectors for Monitoring Short-Pulse and Weak Terahertz Radiation, IEEE Electron Device Lett., 31, pp.674-676 (2010).

DOI: 10.1109/led.2010.2048192

[9] Information on http: /www. teratechcomponents. com.

[10] A.M. Cowley and H.O. Sorensen, Quantitative comparison of solid-state microwave detectors, IEEE Trans. MTTS, vol. 14, no. 12, pp.588-602, Dec. (1966).

DOI: 10.1109/tmtt.1966.1126337

[11] H. Liu J. Yu, P. G. Huggard, and B. Alderman, Measurements of Schottky-Diode Based THz Video Detectors, Terahertz Science and Technology, vol. 14, no. 3, Sep. (2011).