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Characteristics of Lead Free Ferroelectric Thin Films Consisted of (Na0.5Bi0.5)TiO3 and Bi4Ti3O12

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Abstract:

Ferroelectric thin films containing the same volume fraction of the perovskite structure (Na0.5Bi0.5)TiO3 (NBT) and layered structure Bi4Ti3O12 (BIT) were prepared with different stacking sequence. Na0.5Bi4.5Ti4O15 thin film, solid solution of NBT and BIT, was also synthesized to compare with the alternative layered films. Their crystal structure, microstructure and electrical properties were investigated as a function of number of interface. It was found that the interface area as well as each material property is critical to the electrical properties. The alternative layer thin films between NBT and BIT showed positive effect on the dielectric behavior than the single NBIT compound film.

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Periodical:

Advanced Materials Research (Volume 684)

Pages:

307-311

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.684.307

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Online since:

April 2013

Authors:

Kwon Ahn Hee, Young Ho Kim, Keun Gil Sang, Soo Paik Dong, Dong Heon Kang

Keywords:

(Na0.5Bi0.5)TiO3, Bi4Ti3O12, Dielectric Property, Na0.5Bi4.5Ti4O15, Stacking Layer Thin Film

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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