Preparation of 100 GHz InP Transferred Electron Devices

D.Q. Wu; R. Jia; Y. Bai

doi:10.4028/www.scientific.net/AMR.684.299

Paper Titles

Influence of Annealing Atmosphere on the Characteristics of Sol-Gel Derived ITO Thin Films
p.279

Generation of Dense Lying Ga(As)Sb Quantum Dots for Efficient Quantum Dot Lasers
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Experiments with Phase-Delay and Time-Delay Methods for Slow Light in Photonic Crystal Waveguide
p.290

Comparative Study on Off-State Breakdown Characteristics in Nanowire Junctionless and Inversion Mode Multiple Gate MOSFET
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Preparation of 100 GHz InP Transferred Electron Devices
p.299

Optimum Patch Dimension Ratio of T-Shaped Microstrip Antenna
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Characteristics of Lead Free Ferroelectric Thin Films Consisted of (Na_0.5Bi_0.5)TiO₃ and Bi₄Ti₃O₁₂
p.307

Fabrication of Simple GaAs Solar Cell by Zn Diffusion Method
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Synthesizable Digital Phase Locked Loop Implementation
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 684Preparation of 100 GHz InP Transferred Electron...

Preparation of 100 GHz InP Transferred Electron Devices

Abstract:

This paper reports on the development of InP transferred-electron-device sources in mainland of China for operation at around 100 GHz. Using n+-n-n+ structure with graded doping profiles, the oscillations were obtained at 101.8 GHz from a 1 μm structure with an n-doped drift zone and the doping concentration linearly increases from 1.0×1016 to 3.0×1016cm-3. Its continuous wave radio frequency (CWRF) output power was evaluated to be several milliwatt and these results are believed to correspond to a fundamental mode operation. This result is attributed to a processing technique based on the use of etch-stop layers, removal of substrate and the formation of good ohmic contacts.

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Periodical:

Advanced Materials Research (Volume 684)

Pages:

299-302

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.684.299

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Online since:

April 2013

Authors:

D.Q. Wu, R. Jia, Y. Bai

Keywords:

Etch-Stop Layer, InP, Negative Differential Resistance, Ohmic Contact, Transferred Electron Devices

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