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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 684Influence of Annealing Atmosphere on the...

Influence of Annealing Atmosphere on the Characteristics of Sol-Gel Derived ITO Thin Films

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Abstract:

In this paper, the Indium Tin Oxide (ITO) thin ﬁlms were prepared by a sol-gel dip coating method and then annealed at 600°C under different atmosphere (vacuum, N₂ and 96.25%N₂+3.75%H₂). Their microstructure, optical and electrical properties were investigated and discussed. Suitable atmosphere can improve the crystalline of the ITO films, therefore the optical and electrical properties of the ITO films are improved. The uv-vis results showed the maximum of transmittance in the visible range (380-780 nm) of 85.6% and the lowest resistivity of 4.4×10^-2 Ω-cm when the ITO films were annealed under 96.25% N2 with 3.75% H2 atmosphere.

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Advances in Applied Materials and Electronics Engineering II

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Periodical:

Advanced Materials Research (Volume 684)

Pages:

279-284

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.684.279

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Online since:

April 2013

Authors:

Yu Ming Peng, Yan Kuin Su, Ru Yuan Yang

Keywords:

Dip Coating, ITO, Sol-Gel, Thin Film

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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