High-Q Silicon-on-Insulator Micro-Ring Resonator with Silica Covering

Chao Liu; Chen Yang Xue; Dan Feng Cui; Jun Bin Zang; Yong Hua Wang; Jing Xue Wang

doi:10.4028/www.scientific.net/AMR.684.443

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 684High-Q Silicon-on-Insulator Micro-Ring Resonator...

High-Q Silicon-on-Insulator Micro-Ring Resonator with Silica Covering

Abstract:

We designed High-Q micro-ring resonators based on SOI material. A new method of using a top SiO2 layer to cover the waveguide is applied and the tested Q factor is as high as 1.0135×104. Micro-ring resonator has been fabricated using Electron-Beam Lithography and Inductive Coupled Plasma. OptiFDTD was used to simulate the micro-ring resonator and we compared the transmission spectrum of this resonator with the resonator without SiO2 covering.

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Periodical:

Advanced Materials Research (Volume 684)

Pages:

443-446

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.684.443

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Online since:

April 2013

Authors:

Chao Liu, Chen Yang Xue, Dan Feng Cui, Jun Bin Zang, Yong Hua Wang, Jing Xue Wang

Keywords:

High-Quality Factor, MEMS, Micro-Ring Resonator, Optical Waveguides, SOI

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