The Recent Progress of Research on Resistive Random Access Memory

Abstract:

Resistive random access memory (RRAM) has attracted comprehensive attention from academia and industry as a new-type of nonvolatile memory. This memory has many advantages, such as high-speed, low power consumption, simple structure, high-density integration, etc. Therefore, it has a strong potential to replace DRAM. This paper summarizes the recent progress of the studies on RRAM. Although the achievement obtained has been summarized, there is still a long way from the real application. We also discuss the principle and related properties of RRAM and forecast the preparation trends of RRAM

• Periodical: Advanced Materials Research (Volume 685)
• Pages: 372-377
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.685.372
• Online since: April 2013
• Authors: Wen Wen Qiu, Hong Deng, Mi Li, Min Wei, Xue Ran Deng, Jian Qiang Yao, Guang Jun Wen, Rong Tang, Jian Yang, Guang Jun Wen
• Keywords: Memoristor, Nonvolatile, Resistive Switching, RRAM

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