Aluminum-Induced Crystalization of Amorphous Silicon Films Deposited by Megnetron Sputtering

Jun Qian; Wei Min Shi; Jing Jin; Ji Rong Li; Yang Liao

doi:10.4028/www.scientific.net/AMR.690-693.1655

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 690-693Aluminum-Induced Crystalization of Amorphous...

Aluminum-Induced Crystalization of Amorphous Silicon Films Deposited by Megnetron Sputtering

Abstract:

Aluminum–induced crystallization of sputtered a-Si under two-step annealing procedure on glass substrate is studied. A 200 nm thick a-Si film was deposited by magnetron sputtering on glass and a Al film of 150 nm was sputtered on top. The samples were annealed under two-step annealing procedure. Nucleation and growth of grains were followed by optical microscopy (OM), X-ray diffraction (XRD), Raman spectroscopy, and energy dispersive spectroscopy (EDS). Continuous (111) oriented poly-Si films were obtained with a Raman Peak at 520.8cm^-1. The different annealing periods is discussed.

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Periodical:

Advanced Materials Research (Volumes 690-693)

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1655-1658

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https://doi.org/10.4028/www.scientific.net/AMR.690-693.1655

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Online since:

May 2013

Authors:

Jun Qian, Wei Min Shi, Jing Jin, Ji Rong Li, Yang Liao

Keywords:

Aluminum-Induced Crystallization, Amorphous Si, Poly-Silicon

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