Electrodeposition and Properties of CuInS2 Thin Films

Hai Fang Zhou; Xiao Hu Chen

doi:10.4028/www.scientific.net/AMR.690-693.1659

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 690-693Electrodeposition and Properties of CuInS2 Thin...

Electrodeposition and Properties of CuInS₂ Thin Films

Abstract:

The preparation and characterization of CuInS₂ thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS₂ is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

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Periodical:

Advanced Materials Research (Volumes 690-693)

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1659-1663

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.690-693.1659

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Online since:

May 2013

Authors:

Hai Fang Zhou, Xiao Hu Chen

Keywords:

Electro-Deposition, Optical Property, Thin Film

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