Structure Characterization of W-Doped Vanadium Oxide Thin Films Prepared by Reactive Magnetron Sputtering

Abstract:

W-doped Vanadium oxide thin films were prepared on the substrates of SiO₂ glass, float glass and Si (100) by reactive magnetron sputtering after annealing in vacuum. The structure, morphology and phase transition were characterized by X-ray diffractometer, atomic force microscopy (AFM) and differential thermal analysis (DTA), respectively. The results show that, the major phase of W-doped films on SiO₂ glass is VO₂.Dopant reduce the phase transition temperature of VO₂ thin films to 21.9°C. The root-mean-square roughness of the film increase for the longer deposition time.

• Periodical: Advanced Materials Research (Volumes 690-693)
• Pages: 1694-1697
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.690-693.1694
• Online since: May 2013
• Authors: Shuang Chen, Li Fang Zhang, Shu Juan Xiao, Cui Zhi Dong
• Keywords: Magnetron Sputtering, Thin Film, Tungsten Doping, Vanadium Oxide

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