ErGermanide Schottky Junctionfor n-Type Schottky Barrier Ge MOSFET

Abstract:

In this paper, the electricalcharacteristics of Ergermanideschottkyjunction werestudied for source / drain of n-typeschottky barrier Ge MOSFET.Ergermanideshowed the lowest ideality factor at RTP temperature of 600°C among the applied temperature range. When RTP temperature was increased, barrier height and work function of Ergermanidebecame similar to those of Er2Ge3. From the analysis of the leakage current, it is shown that the Poole-Frenkel barrier lowering was dominant at RTP 600°C and the influence of the Schottky barrier lowering was decreased as RTP temperature increased. The electrical characteristics of Ergermanideare very sensitive to the RTP temperature andclosely related tothe trapsites which are generated by germanidation.

• Periodical: Advanced Materials Research (Volume 699)
• Pages: 590-595
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.699.590
• Online since: May 2013
• Authors: Sung Kwen Oh, Meng Li, Hong Sik Shin, Hi Deok Lee
• Keywords: Barrier Height, Ergermanide, Leakage Current, Schottky Barrier Ge MOSFET, Schottky Junction, Thermal Stability

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