Effect of In₂S₃ Buffer Layer in TiO₂/In₂S₃/CuInS₂ Structure

Abstract:

The anodized TiO₂ nanotube arrays (TNAs) have a benefit to provide large surfaces and straight electron transmitting routes to the electrode. However, it is difficult to fulfill with solid state electrolytes or photosensitive materials into the long TiO₂ nanotubes. The substrate of Ti/wave-like TiO₂ was prepared by peel-off the TNAs. The In₂S₃ buffer layer between wave-like TiO₂ and CuInS₂ determines the photosensitivity of the Ti/wave-like TiO₂/In₂S₃/CuInS₂ thin structure. The In₂S₃ and CuInS₂ are well-crystallized at 300oC. The CuInS₂ phase forms in In₂S₃ layer due to Cu diffusion independent on the slight loss of sulfur. The CuInS₂ direct deposition on Ti/wave-like TiO₂ substrate can not exhibit photosensitivity. When CuInS₂ deposited on In₂S₃ to form Ti/wave-like TiO₂/In₂S₃/CuInS₂ structure, the short-circuit current and the open-circuit voltage increase with the thickness increase of In₂S₃ layer while illuminated by 50 mW/cm₂ white light.

• Periodical: Advanced Materials Research (Volume 702)
• Pages: 123-127
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.702.123
• Online since: May 2013
• Authors: Wei Jei Tzeng, Mei Lun Wu, Li Jiaun Lin, Horng Yi Chang
• Keywords: CuInS₂, In₂S₃, Spin Coating, Wave-Like TiO₂

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