Ultraviolet Detector Based on TiO2 Thin Film

Qi Qi Ma; Biao He; Xiao Kun Huang; Yan Lan He; Xiao Yan Yu; Gang Peng

doi:10.4028/www.scientific.net/AMR.704.195

Paper Titles

Solidification Paths within the Ceramic Systems
p.173

Preparation and Characterization of SiCOH Film Using a New Precursor Trimethoxy [2-(oxabicyclo [4.1.0] hept-3yl) Ethyl] Silicane
p.179

Effect of UV Radiation and Leakage Current on Hydrophobicity of RTV Silicone Rubber
p.185

Use of Strain Energy Density W and Q_o as Quality Indices for Rating the Quality of Cast Aluminium Alloy354 as a Function of Processing Parameters
p.189

Ultraviolet Detector Based on TiO₂ Thin Film
p.195

Research on the Influence of Paper Smoothness on the Color Effect
p.200

Comparisons of Nanocrystalline Cu, Ag, and Al Prepared by Room-Temperature-Molding Method and Vacuum-Warm-Compaction Method
p.207

Study of Hybrid Photovoltaic Materials with Poly(3-Hexylthiophene) and CdS Nanoparticles by Spectroscopic Techniques
p.212

Investigation of Nanomechanical and Aging Properties of Scratch-Resistant Coatings on Polycarbonate through Nanoindentation
p.220

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 704Ultraviolet Detector Based on TiO2 Thin Film

Ultraviolet Detector Based on TiO₂ Thin Film

Abstract:

In this paper, TiO₂ thin film with MSM (metal-semiconductor-metal) structure was used to fabricate ultraviolet (UV) detector. The film was fabricated via sol-gel method on silicon wafer with 300nm oxide layer and annealed at four different temperatures (400oC, 500oC, 600oC and 800oC). The quality of the thin films was characterized by means of X-ray diffraction and scanning electron microscope. Then a pair of symmetric Ag electrodes were deposited by thermal evaporation through a shade mask of interdigital structure. The photo-electric properties of the device including I-V characteristic, transfer characteristic and time response et.al. were studied with or without explored to 254nm UV light. The electrical measurements of the device show a big increase of current when explored the device to 254nm UV light, and the rise time of the device is very quick, but the fall time is relatively long. The detector with simple fabrication process, low cost, and superior performance would provide a potential application in UV detectors.

You might also be interested in these eBooks

2013 Spring International Conference on Material Sciences and Technology (MST-S)

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 704)

Pages:

195-199

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.704.195

Citation:

Cite this paper

Online since:

June 2013

Authors:

Qi Qi Ma, Biao He, Xiao Kun Huang, Yan Lan He, Xiao Yan Yu, Gang Peng

Keywords:

MSM, Photoelectric Property, Sol-Gel, TiO₂ Ultraviolet Detector

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] G. Chai, O. Lupan, L. Chow, H. Heinrich, Crossed zinc oxide nanorods for ultraviolet radiation detection, Sens. Actuators A 150 (2009) 184-187.

DOI: 10.1016/j.sna.2008.12.020

Google Scholar

[2] A. Muller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Dinescu, M. Androulidaki, M. Kayambaki, A. Stavrinidis, D. Vasilache, C. Buiculescu, I. Petrini, C. Anton, D. Dascalu, A. Kostopoulos, Ultraviolet MSM photodetector based on GaN micromachining, in: International Semiconductor Conference, Sinaia, 2008, pp.9-94.

DOI: 10.1109/smicnd.2008.4703336

Google Scholar

[3] G. Peng, Y. Q. Zhou, Y. L. He, X. Y. Yu, G. Y. Li, Fabrication and properties of ultraviolet photo-detectors based on SiC nanowires, SCIENCE CHINA Physics, Mechanics & Astronomy 55 (2012) 1168-1171

DOI: 10.1007/s11433-012-4790-x

Google Scholar

[4] H. Zhang, S. P. Ruan, T. J. Xie, C. H. Feng, P. F. Qu, W. Y. Chen, W. Dong, Zr0.27Ti0.73O2-Based MSM Ultraviolet Detectors With Pt Electrodes, IEEE ELECTRON DEVICE LETTERS, 32 (2011) 653-655.

DOI: 10.1109/led.2011.2110633

Google Scholar

[5] W. F. Xiang, P. R. Yang, A. J. Wang, K. Zhao, H. Ni, S. X. Zhong, Vertical geometry ultraviolet photodetectors with high photosensitivity based on nanocrystalline TiO2 films, Thin Solid Films, 520 (2012) 7144-7146.

DOI: 10.1016/j.tsf.2012.07.110

Google Scholar

[6] F. H. Babaei, S. Abbaszadeh, M. S. Esfahani, Gas sensitive porous silver-rutilehigh-temperature Schottky diode on thermally oxidized titanium, IEEE Sens. J. 9 (2009) 237-243.

DOI: 10.1109/jsen.2008.2006432

Google Scholar

[7] F. H. Babaei, S. Rahbarpour, Titanium and silver contacts on thermally oxidized titanium chip: electrical and gas sensing properties, Solid-State Electron. 56 (2011) 185-190.

DOI: 10.1016/j.sse.2010.12.007

Google Scholar

[8] M. Sreemany, A. Bose, S. Sen, A study on structural, optical, electrical and microstructural properties of thin TiOx films upon thermal oxidation: effect of substrate temperature and oxidation temperature, Phys. B 405 (2010) 85-93.

DOI: 10.1016/j.physb.2009.08.031

Google Scholar

[9] J. Xing, H. Y. Wei, E. J. Guo, F. Yang, Highly sensitive fast-response UV photodetectors based on epitaxial TiO2 films, J. Phys. D: Appl. Phys. 44 (2011) 375104-375108.

DOI: 10.1088/0022-3727/44/37/375104

Google Scholar

[10] Y. H. Chang, C. M. Liu, Y. C. Tseng, C. Chen, C. C. Chen, H. E. Cheng, Direct probe of heterojunction effects upon photoconductive properties of TiO2 nanotubes fabricated by atomic layer deposition, Nanotechnology 21 (2010) 225602-225608

DOI: 10.1088/0957-4484/21/22/225602

Google Scholar

[11] H. G. Moser, Silicon detector systems in high energy physics, Prog. Part. Nucl. Phys. 63 (2009) 186-237.

Google Scholar

[12] G. Peng, X. Y. Yu, Y. Q. Zhou, G. Wang, L. Wang, Y. L. He, The Influence of Atmosphere on Electrical Transport Properties in Bilayer Graphene FET by CVD Methods, Key Engineering Materials 531 (2013) 383-387

DOI: 10.4028/www.scientific.net/kem.531-532.383

Google Scholar