Preparation and Characterization of SiCOH Film Using a New Precursor Trimethoxy [2-(oxabicyclo [4.1.0] hept-3yl) Ethyl] Silicane

Abstract:

The SiCOH film has been prepared by using a new precursor of trimethoxy [2-(7-oxabicyclo [4.1.hept-3-yl) ethy silane via sol-gel and spin-coating methods. The resulting films were characterized by SEM, TGA, AFM, FTIR, nanomechanical testing, and electrical measurements. The TGA result shows that the SiCOH film has good thermal stability, and no obvious thermal decomposition can be observed before 400°C. After being annealed at 350°C for 2 hours, the resulting SiCOH film exhibits a smooth surface (RMS=0.222nm), and a significant reduction of CH_n groups in the film. Further, the film exhibits a novel high k value of 15.6, a leakage current density of 2.72 × 10^-6 A/cm² at 1 MV/cm, and good mechanical properties of E_r ~ 12.61 GPa and H ~ 3.80 MPa.

• Periodical: Advanced Materials Research (Volume 704)
• Pages: 179-184
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.704.179
• Online since: June 2013
• Authors: Zi Jun Ding, Shi Jin Ding, Ying Zhong Shen
• Keywords: Dielectric-Constant Materials, Polymer for Microelectronics, Spin-Coating

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