Numerical Simulation of Nc-Silicon PIN Solar Cells with AMPS-1D

Ming Kun Xu

doi:10.4028/www.scientific.net/AMR.712-715.309

Paper Titles

Theoretical Study on Ni₂XIn (X=Mn, Fe and Co) Magnetic Shape Memory Alloys by Ab Initio Calculations
p.288

In Situ Testing and X Rays Radiation Effects of Pt/Bi_3.15Nd_0.85Ti₃O₁₂/Pt Ferroelectric Capacitors
p.293

Study on Preparation of Octyltrimethoxysilane
p.298

Characteristics of 2D Cylindrical Photonic Crystals Band Gap with Square Lattice
p.302

Numerical Simulation of Nc-Silicon PIN Solar Cells with AMPS-1D
p.309

Electrochemical Performances of Li_4-xK_XTi₅O₁₂(x=0.02, 0.04, 0.06) as Anode Materials for Lithium Ion Battery
p.313

GC/MS Analysis of Products from Catalytic Hydroconversion of Dagang Vacuum Residue with Y Zeolite
p.317

The Effect of Boric Acid Addition on the Performance of a Gelled Electrolyte
p.321

Thermodynamic Behavior of SiH₂Cl₂ in Polysilicon Production by Siemens Process
p.325

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Numerical Simulation of Nc-Silicon PIN Solar Cells with AMPS-1D

Abstract:

P+a-SiC/ I nc-Si/N+a-Si structure solar cells is simulated by AMPS-1D program package to characterize the new thin film solar cell. In order to analyze the characteristics of the device, the thickness of layer are considered. The results show that the thickness of layer and the value of layer have a great effect on the conversion efficiency. Our results suggest a high performance P a-SiC/ I nc-Si/N a-Si structure solar cells with high efficiency of 14.411% and fill factor of 0.738. The simulation result is potentially valuable in exploring gradual bandgap P+a-SiC/I nc-Si/N+a-Si structure solar cells with high performance.