Enhanced Light Absorption and Minority Carrier Lifetime for Pn+ Multicrystalline Silicon by Treatment with HF/H2O2-Based Solutions

Wei Ying Ou; Wei Ming Lu; Lei Zhao; Wen Jing Wang; Zhong Quan Ma

doi:10.4028/www.scientific.net/AMR.712-715.341

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 712-715Enhanced Light Absorption and Minority Carrier...

Enhanced Light Absorption and Minority Carrier Lifetime for Pn⁺ Multicrystalline Silicon by Treatment with HF/H₂O₂-Based Solutions

Abstract:

A novel method was proposed to form porous silicon (PS) antireflection layers and thin SiO2 films at the same time by HF/H2O2 treatment of acid-textured pn+ multicrystalline silicon. Porous silicon structures formed inside the cavities and the porosity became large with an increase of the treated time resulting in a dramatical decrease of reflectance. The reflectance decreased to less than 5% within the wavelength range of 420-970 nm after 5 min HF/H2O2 treatment. Furthermore, the minority-carrier lifetime showed an increase of about 42% for a short treated time because of the formation of a thin silicon oxide layer resulting the reduction of dangling silicon bonds in the interface between PS/Si.

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Periodical:

Advanced Materials Research (Volumes 712-715)

Pages:

341-344

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.712-715.341

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Online since:

June 2013

Authors:

Wei Ying Ou*, Wei Ming Lu, Lei Zhao, Wen Jing Wang, Zhong Quan Ma

Keywords:

Antireflection, Multicrystalline Silicon, Passivation, Porous Silicon, SiO₂

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