Investigation of Gate Degradation Characteristics of AlGaN/GaN HEMTs under PWM Stress

Abstract:

An investigation of gate degradation characteristics of AlGaN/GaN HEMTs under PWM stress is proposed in this paper. The device under testing features double source-connected field plates to reshape the surface electric field. A PWM signal with the operation frequency varied from 10 kHz to 1 MHz was applied to the gate electrode while the source was shorted to ground. HP 4155B was used to measure the gate characteristic of the device by every 30 minutes. The value of on-resistance shows an increase of 12.9 % after the device has been under stress for 30 minutes with the switching frequency of 10 kHz and the degradation is improved with higher switching frequency, while the threshold voltage and gate leakage current do not change significantly during the test.

• Periodical: Advanced Materials Research (Volumes 732-733)
• Pages: 1255-1260
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.732-733.1255
• Online since: August 2013
• Authors: Chen Chen*, Gang Xie, Ceng Tang, Kuang Sheng
• Keywords: Double Field Plates Structure, Gate Degradation Characteristics, High-Electron Mobility Transistor, PWM Stress

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