Power Losses of MOSFETs in DC/DC Converters Based on Single-Ended forward Topology and Resonant Reset Technology

Guo Ying Xu; Hai Sheng Yu; Hua Chang Zou; Ming Cheng; Hao Yang

doi:10.4028/www.scientific.net/AMR.739.408

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 739Power Losses of MOSFETs in DC/DC Converters Based...

Power Losses of MOSFETs in DC/DC Converters Based on Single-Ended forward Topology and Resonant Reset Technology

Abstract:

This document explains and demonstrates the composing of power losses of MOSFETs in DC/DC converters which are based on Single-ended Forward topology and Resonant Reset technology and how to calculate the losses by equations. For the purpose of validating the correctness of these equations, two different MOSFETs are chosen and uesed in the same DC/DC converter. Furthermore, some practical method is presented in choosing the most suited MOSFETs for certain DC/DC converters.

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Periodical:

Advanced Materials Research (Volume 739)

Pages:

408-412

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.739.408

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Online since:

August 2013

Authors:

Guo Ying Xu, Hai Sheng Yu, Hua Chang Zou, Ming Cheng, Hao Yang

Keywords:

Dc-Dc Converter, Power Loss, Resonant Reset, Single-Ended Forward

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References

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