Effects of Mg-Doping on Resistance Switching Property of MgxZn1-xO Thin Films Prepared by Sol-Gel Method

Hua Wang; Shu Ming Gao; Ji Wen Xu; Ling Yang; Wei Qiu

doi:10.4028/www.scientific.net/AMR.750-752.1034

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 750-752Effects of Mg-Doping on Resistance Switching...

Effects of Mg-Doping on Resistance Switching Property of Mg_xZn_1-xO Thin Films Prepared by Sol-Gel Method

Abstract:

The films of Mg_xZn_1-xO were prepared on ITO-coated glass substrates by sol-gel method at low temperature. The influence of Mg content x on microstructure and resistive switching behavior in Mg_xZn_1-xO films was systematically investigated. It was found that all Mg_xZn_1-xO samples exhibit a polycrystalline character with a single phase hexagonal wurtzite structure, irrespective of the Mg content x. With the increase of Mg content x, the V_set, V_reset, R_LRS and R_HRS/R_LRS of Mg_xZn_1-xO films increased, but the endure of Mg_xZn_1-xO films switching cycles decreased as the Mg content x is over 0.2 and exhibited a smaller degradation of resistance as the Mg content x is 0.1. The resistance switching mechanism was discussed.

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Periodical:

Advanced Materials Research (Volumes 750-752)

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1034-1037

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https://doi.org/10.4028/www.scientific.net/AMR.750-752.1034

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August 2013

Authors:

Hua Wang*, Shu Ming Gao, Ji Wen Xu, Ling Yang, Wei Qiu

Keywords:

Mg Dope, Mg_xZn_1-xO, Property, Resistence Switching

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