Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films

Yi Fan Jiang; Ling Xu; Jing Chen; Rui Zhang; Wei Ning Su; Yao Yu; Zhong Yuan Ma; Jun Xu

doi:10.4028/www.scientific.net/AMR.750-752.1044

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 750-752Study on the Crystallization Behavior of Ge2Sb2Te5...

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films

Abstract:

Ge2Sb2Te5 thin films and Si doped Ge2Sb2Te5 thin films were deposited by electron beam evaporation method. The crystallization behaviors of the films were investigated by using the in situ resistance measurement. Through in situ resistance measurement, the increases of amorphous stability, crystallization rate and crystalline resistivity after Si doping were observed. The promoted nucleation process and the retardation of crystal growth were found in Si doped samples through the calculation of JMAK equation.

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Advanced Materials Research (Volumes 750-752)

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1044-1047

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.750-752.1044

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Online since:

August 2013

Authors:

Yi Fan Jiang, Ling Xu, Jing Chen, Rui Zhang, Wei Ning Su, Yao Yu, Zhong Yuan Ma, Jun Xu

Keywords:

Crystallization Behavior, GeSbTe, Resistance Measurement, Si Doping

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References

[1] A. L. Lacaita, Solid-State Electron 50 (2006), p.24.

Google Scholar

[2] T. Ohta, IEEE Trans. Magn. 47 (2011), p.613.

Google Scholar

[3] M. Wuttig, N. Yamada, Nat. Mater 6 (2007), p.347.

Google Scholar

[4] Yu-Jen Huang, Yen-Chou Chen, and Tsung-Eong Hsieh, J. Appl. Phys. 106 (2009), p.034916.

Google Scholar

[5] I. Yang, K. Do, H. -J. Chang, D. -H. Ko, and H. Sohn, J. Electrochem. Soc. 157 (2010), H483.

Google Scholar

[6] X. L. Zhou, L. C. Wu, Z. T. Song, F. Rao, B. Liu, D. N. Yao, W.J. Yin, J. T. Li, S. L. Feng and Bomy Chen, Appl. Phys. Express 2 (2009), p.091401.

Google Scholar

[7] S. Privitera, E. Rimini, and R. Zonca, Appl. Phys. Lett. 85 (2004), p.3044.

Google Scholar

[8] W. D. Song, L. P. Shi, X. S. Miao, and T. C. Chong, Appl. Phys. Lett. 90 (2007), p.091904.

Google Scholar

[9] Tae-Jin Park, Se-Young Choi, Myung-Jin Kang, Thin Solid Films, 515 (2006), p.5049.

Google Scholar

[10] Guoxiang Wang, Qiuhua Nie, Xiang Shen, R. P. Wang, Liangcai Wu, Jing Fu, Tiefeng Xu, and Shixun Dai, Appl. Phys. Lett. 101, 051906 (2012).

Google Scholar

[11] L. Tong, L. Xu, Y.F. Jiang, Fei Yang, L. Geng, J. Xu, W.N. Su, Z.Y. Ma, K.J. Chen, J. Non-Cryst. Solids. 358 (2012), p.2402.

Google Scholar

[12] S-J, Park, S-K. Kim, S-M. Yoon, B-G. Yu, and S-Y. Choi, Semicond. Sci. Technol. 23 (2008), p.105006.

Google Scholar

[13] H. Horii, J.H. Yi, J.H. Park, Y.H. Ha, I.G. Baek, S.O. Park, Y.N. Hwang, S.H. Lee, Y.T. Kim, K.H. Lee, J.T. U-In Chung, Moon, VLSI. Symp. Tech. Dig (2003) p.177.

Google Scholar

[14] Dae-Hwang Kim, Florian Merget, Martin Laurenzis, Peter Haring Bolivar, and Heinrich Kurz, J. Appl. Phys. 97(2005), p.083538.

Google Scholar

[15] Yu-Jen Huang, Yen-Chou Chen, and Tsung-Eong Hsieh, J. Appl. Phys. 106 (2009), p.034916.

Google Scholar

[16] Claudio D, Gonzalez-Hernandez J, Licea O, Laine B, Prokhorov E and Trapaga G 2006 J. NonCryst. Sol 352 (2006), p.51.

DOI: 10.1016/j.jnoncrysol.2005.11.007

Google Scholar