Paper Titles

Study on the Crystallization Behavior of Ge2Sb2Te5 and Silicon Doped Ge2Sb2Te5 Films
p.1044

Phase Transition of GeSbTe Thin Films Induced by Thermal Treatment and Laser Irradiation
p.1048

Initial Surface Reactions Mechanisms of Atomic Layer Deposition TiO₂ on H/Si(100)-2×1 Surface
p.1052

Preparation and Performance of Silver Coated Copper Powder
p.1057

Improved Efficiency in Organic Light Emitting Device with a Excton Confining Structure
p.1063

Preparation of Fe₃O₄-Coated Microsilica Composites via Chemical Reduction Method
p.1071

Study on Synthesis and Characterization of Styrene-Maleic Anhydride Random Copolymer by Xylene
p.1075

The Status-Quo and Prospect of the Self-Cleaning Glass
p.1079

Palladium Supported on Functionalized Mesoporous Silica: Synthesis, Structure and Catalytic Properties in Suzuki-Miyaura Coupling Reactions
p.1083

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 750-752Improved Efficiency in Organic Light Emitting...

Improved Efficiency in Organic Light Emitting Device with a Excton Confining Structure

Article Preview

Abstract:

A white organic light emitting device (WOLED) with excton confining structure is reported. The blue and red emitting layer consist of 1,4bis (2,2-diphenyl vinyl) benzene (DPVBi) and the bis (1-(phenyl) isoquinoline) iridium (III) acetylanetonate [Ir (piq)₂(acac)] doped into 4,4(-N,N)-dicarbazole-biphenyl (CBP) host, respectively. The devices were made of ITO/ m-MTDATA (40 nm)/ NPB (10 nm) /DPVBi (8 nm)/ Bhen (x nm)/ CBP: Ir (piq)₂(acac) 2% 5nm/ Alq (50 nm )/ LiF (1 nm) / Al (200 nm), by adding excton confining layer, with only a small increase in operating voltage. However, the efficiency of device increases. The electroluminescent (EL) spectra exhibit two peaks at 456 and 628 nm, resulting in white light emission with the Commission Internationale dEclairage (CIE) chromaticity coordinates of (0.222, 0.2402) at 4V to (0.1924, 0.1986) at 13V when x is 8, while the device shows the current efficiency of 4.79 cd/A at 6V, its maximum luminance is 14130 cd/m² at 13V, respectively.

You might also be interested in these eBooks

Advanced Engineering Materials III

Info:

Periodical:

Advanced Materials Research (Volumes 750-752)

Pages:

1063-1067

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.750-752.1063

Citation:

Cite this paper

Online since:

August 2013

Authors:

Hui Shan Yang, Li Shuang Wu, Yu Zhuo Pan

Keywords:

Commission Internationale de l’Eclairage (CIE) Coordinates, Efficiency, Excton Confining Layer, Luminance, White Organic Light-Emitting Diode (OLED)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] C. W. Tang and S. A. VanSlyke: Appl. Phys. Lett. Vol. 51 (1987), p.913.

[2] J. Kali-nowski, M. Cocchi, D. Virgili, V. Fattori, and J. A. GarethWillams: Adv. Mater. Vol. 19(2007), p.4000.

[3] Y. Sun, N. C. Giebink, H. Kanno, B. Ma, M. E. Thompson, and S. R. Forrest: Nature. Vol. 440(2006), p.908.

[4] Y. G. Lee, I. S. Kee, H. S. Shim, I. H. Ko, S. Lee, and K. H. Koh: Appl. Phys. Lett. Vol. 90(2007), p.243508.

[5] J. H. Seo, J. H. Park, Y. K. Kim, J. H. Kim, G. W. Hyung, K. H. Lee, and S. S. Yoon: Appl. Phys. Lett. Vol. 90 (2007), p.203507.

[6] H. Kanno, N. C. Giebink, Y. Sun, and S. R. Forrest: Appl. Phys. Lett. Vol. 89 (2006), p.023503.

[7] H. Kanno, R. J. Holms, Y. Sun, S. KenaCohen, and S. R. Forrest: Adv. Mater. Vol. 18(2006), p.339.

[8] C. C. Chang, J. F. Chen, S. W. Hwang, and C. H. Chen: Appl. Phys. Lett. Vol. 87 (2005), 253501.

[9] S. Tokito,T. Iijima,T. Tsuzuki, and F. Sato: Appl. Phys. Lett. Vol. 83 (2003), p.2459.

[10] J. H. Park, T. W. Lee, Y. C. Kim, O. O. Park, and J. K. Kim: Chem. Phys. Lett. Vol. 403(2005), p.293.

[11] G. Schwartz, K. Fehse, M. Pfeiffer, K. Walzer, and K. Leo: Appl. Phys. Lett. Vol. 89(2006), p.083509.

[12] S. Tao, C. S. Lee, S. T. Lee, and X. Zhang: Appl. Phys. Lett. Vol. 91(2007), p.013507.

[13] T. W. Lee, J. H. Park, O. O. Park, J. Lee, and Y. C. Kim: Opt. Mater. Vol. 30 (2007), p.486.

[14] T. W. Lee, O. O. Park, H. N. Cho, J. M. Hong, C. Y. Kim, and Y. C. Kim: Synth. Met. Vol. 122 (2001), p.437.

[15] S. W. Wen, M. T. Lee, C. H. Chen: IEEE/ OSAJ. Disp. Technol. Vol. 1 (2005), p.90.

[16] S. Tokito, T. Iijima, Y. Suzuri, and H. Kita: Appl. Phys. Lett. Vol. 83(2003), p.569.

[17] T. Nakayama, K. Hiyama, K. Furukawa, and H. Ohtani:J. SID. Vol. 16 (2008), p.231.

[18] P. Wellmann, M. Hofmann, O. Zeika, A. Werner, J. Birnstock, R. Meerheim, G. He, K. Walzer, M. Pfeiffer, and K. Leo: J. SID. Vol. 13(2005), p.393.

DOI: 10.1889/1.1927730

[19] Y. Divayana, X. W. Sun, B. J. Chen, G. Q. Lo, C. Y. Jiang, and K. R. Sarma: Appl. Phys. Lett. Vol. 89(2006), p.173511.

[20] Chih-Hao Chang, Chung-Chia Chen, Chung-Chih Wu, Cheng-Han Yang, and Yun Chi: Org. Electron. Vol. 10( 2009), p.1364.

[21] Y. Divayana, X. W. Sun: Org. Electron. Vol. 9 (2008), p.136.