[1]
T. Hanada, Y. H. Liu, T. Kimura, Y. Zhang, K. Prasertsuk, R. Katayama, and T. Matsuoka. Temperature Dependence of Bandgap Energy of InN Grown by Pressurized-Reactor MOVPE, The 6th International Workshop on Nitride Semiconductors (IWN2010), CP1.28 (Tampa, USA, Sept.17-25, 2010).
DOI: 10.1002/pssc.201100390
Google Scholar
[2]
T. Hanada, Y. H. Liu, Y. T. Zhang, H. Tajiri, O. Sakata, T. Kimura, K. Prasertsuk, R. Katayama, and T. Matsuoka. Temperature-Dependent Static Correlation Functions of Vibrational Atomic Displacements for InN Film Measured by X-ray Diffraction, The 9th International Conference on Nitride Semiconductors (ICNS-9), PD3.31 (Glasgow, UK, July 10-15, 2011).
Google Scholar
[3]
Y. H. Liu, Y. T. Zhang, T. Kimura, S. Y. Ji, and T. Matsuoka. Growth of InN by Pressurized Reactor MOVPE: Morphology Evolution, The 8th International Conference on Nitride Semiconductors (ICNS-8), ThP23, (Jeju, Korea, Oct. 18-23, 2009).
Google Scholar
[4]
Y. H. Liu, T. Kimura, T. Shimada, M. Hirata, M. Wakaba, M. Nakao, S. Y. Ji, and T. Matsuoka. MOVPE growth of InN: A comparison between a horizontal and a vertical reactor, phys. stat. sol. (c), 2009, 6, S381-S384.
DOI: 10.1002/pssc.200880914
Google Scholar
[5]
T. Sasaki and T. Matsuoka. Analysis of two-step-growth conditions for GaN on an AlN buffer layer, J. Appl. Phys., 1995, 77, 192-200.
DOI: 10.1063/1.359368
Google Scholar
[6]
K. Hiramatsu. Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth, phys. stat. sol. (a), 1999, 176, 535-543.
DOI: 10.1002/(sici)1521-396x(199911)176:1<535::aid-pssa535>3.0.co;2-i
Google Scholar
[7]
Q. X. Guo, A. Yoshida. Temperature Dependence of Band Gap Change in InN and AlN, Jpn. J. Appl. Phys., 1994, 33, 2453-2456.
DOI: 10.1143/jjap.33.2453
Google Scholar
[8]
K. Sugita, A. Hashimoto, and A. Yamamoto. Effect of oxygen supply on MOVPE InN, Physica Status Solidi (C), 2009, 6, S389-S392.
DOI: 10.1002/pssc.200880940
Google Scholar
[9]
T. Matsuoka, Y. Liu, T. Kimura, Y. Zhang, K. Prasertusk and R. Katayama. Paving the way to high-quality indium nitride: the effects of pressurized reactor,Proc. SPIE , 2011, 7945, 794519.
DOI: 10.1117/12.869771
Google Scholar
[10]
Yuantao Zhang, Yuhuai Liu, Takeshi Kimura, Masaki Hirata, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka. Effect of Growth Temperature on Structure Properties of InN Grown by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy, phys. stat. sol. (c), 2011, 8, 482-484.
DOI: 10.1002/pssc.201000464
Google Scholar
[11]
Jung Gon Kim, Yasuhito Kamei, Atsuhito Kimura, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda , Yu Huai Liu, and Takashi Matsuoka. Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy, phys. stat. sol. (b), 2012, 249, 779-783.
DOI: 10.1002/pssb.201147452
Google Scholar
[12]
Kiattiwut Prasertsuk, Masaki Hirata, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Takuya Iwabuchi, Ryuji Katayama, Takashi Matsuoka, Relationship between residual carrier density and phase purity in InN grown by pressurized-reactor MOVPE, physica status solidi (c), 2012, 9, 681-684.
DOI: 10.1002/pssc.201100404
Google Scholar