Pulsed I-V Auto-Measurement of High Power MOSFETs without Self-Heating

Abstract:

A novel Sagittarius automatic Pulsed I-V measurement system was developed. This new system eliminated the self-heating effect which affected static measurements of High Power MOSFETs using conventional methods. It provided the true output conductance and trans-conductance, solved the device modeling problems caused by negative output conductance of high power devices. The automation measurement function can fulfill the mass measurement requirements of semiconductor industry with high efficiency and accuracy.

• Periodical: Advanced Materials Research (Volumes 765-767)
• Pages: 2140-2143
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.765-767.2140
• Online since: September 2013
• Authors: Wei Sun
• Keywords: Automatic Measurement, High-Power MOSFET, Pulsed I-V

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