Effect of Sputtering Power on Structural and Optical Properties of AlN Thin Film Deposited by Reactive DC Sputtering Technique

Abstract:

Aluminum nitride (AlN) thin films have been deposited on the glass slide and Si-wafer by reactive DC magnetron sputtering technique at different sputtering power. The as-deposited films have been characterized by grazing-incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM) and optical transmittance, respectively. The results show that the as-deposited films were transparent and have high transmittance in visible regions. The crystal structure from XRD results show that the as-deposited films are amorphous with low sputtering power and turn to crystal structure with high sputtering power, which showed orientation of AlN structure corresponding to the AlN(1 0 0), AlN(1 0 1) and AlN(1 1 0). The roughness values and the films thickness from AFM was varied from 0.4 nm to 3.9 nm and 199 nm to 905 nm, respectively. The optical constants namely the refractive index n and the extinction coefficient k, were determined from transmittance spectrum in the visible regions by using envelope method. For 500 nm, n and k, were in the range of 1.8 2.0 and 0.014 0.004 respectively.

• Periodical: Advanced Materials Research (Volume 770)
• Pages: 177-180
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.770.177
• Online since: September 2013
• Authors: Nirun Witit-Anun, Jakrapong Kaewkhao, Surasing Chaiyakun
• Keywords: AlN Thin Films, Optical Constant, Reactive DC Sputtering

References

[1] H.C. Barshilia, B. Deepthi, K.S. Rajam, Growth and characterization of aluminum nitride coatings prepared by pulsed-direct current reactive unbalanced magnetron sputtering, Thin Solid Films. 516 (2008) 4168-4174.

DOI: 10.1016/j.tsf.2007.10.129

[2] V.I. Dimitrova, D.I. Manova, D.A. Dechev, Study of reactive DC magnetron sputtering deposition of AlN thin films, Vacuum. 49 (1998) 193-197.

DOI: 10.1016/s0042-207x(97)00128-0

[3] S. Tanaka, R.S. Kern, J. Bently, R.F. Davis, Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy, Japanese Journal of Applied Physics. 35 (1996) 1641-1647.

DOI: 10.1143/jjap.35.1641

[4] A.V. Dobrynin, Thermoelastic strain and plastic yielding in aluminum nitride on sapphire, Journal of Applied Physics. 85 (1999) 1876-1882.

DOI: 10.1063/1.369312

[5] M.A. Moreira, I. Doi, J.F. Souza, J.A. Diniz, Electrical characterization and morphological properties of AlN films prepared by dc reactive magnetron sputtering. Microelectronic Engineering. 88 (2011) 802-806.

DOI: 10.1016/j.mee.2010.06.045

[6] S. Venkataraj, D. Severin, R. Drese, F. Koerfer, M. Wuttig, Structural, optical and mechanical properties of aluminium nitride films prepared by reactive DC magnetron sputtering, Thin Solid Films. 502 (2006) 235-239.

DOI: 10.1016/j.tsf.2005.07.281

[7] H.Y. Joo, H.J. Kim, S.J. Kim, S.Y. Kim, The optical and structural properties of AlN thin films characterized by spectroscopic ellipsometry, Thin Solid Films. 368 (2000) 67-63.

DOI: 10.1016/s0040-6090(00)00712-4

[8] R. Swanepoel, R, Determination of the thickness and optical constant of amorphous silicon. Journal of Physics. E. 16 (1983) 1214-1222.