Effect of N₂ Flow Rates on Properties of Nanostructured TiAlN Thin Films Prepared by Reactive Magnetron Co-Sputtering

Abstract:

The TiAlN thin films with different crystal structure, surface morphology, microstructure and chemical compositions were deposited on Si (100) plane by changing the N₂ flow rate from 2 to 10 sccm using co-targeted reactive magnetron sputtering technique in the same process. The effect of nitrogen flow rate on structure and properties of TiAlN thin films was investigated in the study. The films were characterized by X-ray Diffraction (XRD), Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) techniques, respectively. The results show that the crystal structure, surface morphologies microstructure and chemical compositions of the film are strongly depended on the N₂ flow rates. The (111) (200) and (220) planes of TiAlN thin films were found with different nitrogen flow rates, one is the preferred orientation of (111) plane that appeared for nitrogen flow rates of 2 sccm, the other one is the preferred orientation of (200) plane for the higher nitrogen flow rates of 4-10 sccm. The crystal size of the films was also determined by Scherrers equation, varied between 13.8 - 35.6 nm. The roughness of the as-deposited films was ranging from 1.8 to 4.3 nm. The chemical compositions of TiAlN were depended on N₂ flow rates. The microstructure and cross-sectional SEM analysis revealed that the nanograins were developed and thickness decreased from 381 nm to 131 nm. In addition, the columnar structures were observed for all films.

• Periodical: Advanced Materials Research (Volume 770)
• Pages: 161-164
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.770.161
• Online since: September 2013
• Authors: Surasing Chaiyakun, Areerat Somwangsakul, Adisorn Buranawong, Jakrapong Kaewkhao, Nirun Witit-Anun
• Keywords: N₂ Flow Rates, Reactive Magnetron Co-Sputtering, TiAlN Thin Films

References

[1] W.J. Chou, Ge.P. Yu, J.H. Huang, Effect of heat treatment on the structure and properties of ion-plated TiN films, Surf. Coat. Technol. 168 (2003) 43 -50.

DOI: 10.1016/s0257-8972(03)00007-0

[2] W.K. Chung, H.K. Kwang, Anti-oxidation properties of TiAlN film prepared by plasma-assisted chemical vapor deposition and roles of Al, Thin Solid Films. 307 (1997) 113 -119.

DOI: 10.1016/s0040-6090(97)00212-5

[3] T. Zhou, P. Nie, X. Cai, P.K. Chu, Influence of N2 partial pressure on mechanical properties of (Ti,Al)N films deposited by reactive magnetron sputtering, Vacuum. 83 (2009) 1057 -1059.

DOI: 10.1016/j.vacuum.2009.01.001

[4] Y.C. Chan, H.W. Chen, P.S. Chao, J.G. Duh, J.W. Lee, Microstructure control in TiAlN/SiNx multilayers with appropriate thickness ratios for improvement of hardness and anti-corrosion characteristics, Vacuum. 87 (2013) 195 -199.

DOI: 10.1016/j.vacuum.2012.02.052

[5] L. Chen, K.K. Chang, Y. Du, J.R. Li, M.J. Wu, A comparative research on magnetron sputtering and arc evaporation deposition of Ti–Al–N coatings, Thin Solid Films. 519 (2011) 3762 -3767.

DOI: 10.1016/j.tsf.2011.01.358

[6] J.C. Oliveira, A. Manaia, A. Cavaleiro, Hard amorphous Ti–Al–N coatings deposited by sputtering, Thin Solid Films. 516 (2008) 5032 -5038.

DOI: 10.1016/j.tsf.2008.02.006

[7] B. Subramanian, K. Ashok, P. Kuppusami, C. Sanjeeviraja, M. Jayachandran, Characterization of reactive DC magnetron sputtered TiAlN thin films, Cryst. Res. Technol. 43 (2008) 1078 -1802.

DOI: 10.1002/crat.200811175