Simulation of Polarization Effect in GaN/AlN Resonant Tunneling Diode

Nai Yun Tang

doi:10.4028/www.scientific.net/AMR.774-776.691

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 774-776Simulation of Polarization Effect in GaN/AlN...

Simulation of Polarization Effect in GaN/AlN Resonant Tunneling Diode

Abstract:

Influence of polarization effect on current across GaN/AlNresonant tunneling diode (RTD) is simulated by self-consistent calculations ofSchrödinger and Poisson equations. When taking into account polarization chargesat the heterointerface, the band diagram and electronic properties of RTD areobviously changed. As a result, the current-voltage characteristics showsasymmetrical phenomenon. As the polarization effect is enhanced, the resonancepeak is shifted accordingly and even disappears.