Vertical Floating Zone Crystal Growth of R2PdSi3 Intermetallic Compounds (R=Pr and Nd)

Yi Ku Xu; Lin Liu; Wolfgang Löser; Matthias Frontzek

doi:10.4028/www.scientific.net/AMR.774-776.720

Paper Titles

Numerical Simulation of Binary Alloy Crystal Growth of Multiple Dendrites and Direcitonal Solidification Using Phase-Field Method
p.703

Research on the Simulation of Friction Material Surface Topography
p.707

An Applied Research of Automatic Detection Method for Maturity Degree of Viscose
p.711

Lamination of Green Ceramic Tapes with Adhesive at Ambient Temperature
p.716

Vertical Floating Zone Crystal Growth of R₂PdSi₃ Intermetallic Compounds (R=Pr and Nd)
p.720

Effect of Co-Doping on Iron-Based Oxygen Carrier for CO Oxidation in Chemical Looping Combustion
p.725

Study on Continuous Separation of High Concentration Cr (III) and Cr (VI) from Strong Acidic Aqueous Solution Using Strong Alkaline Anion Exchange Fiber Column
p.729

Adsorption to Cu²⁺ in Waste Water with Chitosan Intercalation Bentonite
p.733

Numerical Simulation on Two Phase Combustion Characteristic in Solid Rocket Ramjet Afterburning Chamber
p.737

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 774-776Vertical Floating Zone Crystal Growth of R2PdSi3...

Vertical Floating Zone Crystal Growth of R₂PdSi₃ Intermetallic Compounds (R=Pr and Nd)

Abstract:

The class of R₂PdSi₃ single crystals (R= rare earth element) with hexagonal AlB₂-type crystallographic structure reveals the systematic dependence of anisotropic magnetic properties governed by the interplay of crystal-electric field effects and magnetic two-ion interactions. Here we compare the floating zone (FZ) crystal growth with radiation heating of compounds Pr₂PdSi₃ and Nd₂PdSi₃. The congruent melting behavior enabled moderate growth velocities of 3 to 5 mmh^-1. The preferred growth directions are close to the basal plane of the hexagonal unit cell. The composition of the crystals, is slightly Pd-depleted with respect to the nominal composition 16.7 at.% Pd. The Pr₂PdSi₃ compound exhibit antiferromagnetic order below the Néel temperatures T_N: 2.17 K and Nd₂PdSi₃ compound order ferromagnetically below the Curie temperature T_C = 15.1 K.

You might also be interested in these eBooks

Advanced Technologies in Manufacturing, Engineering and Materials

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 774-776)

Pages:

720-724

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.774-776.720

Citation:

Cite this paper

Online since:

September 2013

Authors:

Yi Ku Xu, Lin Liu, Wolfgang Löser, Matthias Frontzek

Keywords:

Floating Zone Technique, Magnetic Property, Rare Earth Compounds, Single Crystal Growth

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] P.A. Kotsandis, J.K. Yakinthos, E. Gamari-Seale, J. Magn. Magn. Mater. Vol. 87 (1990), p.199.

Google Scholar

[2] R. Mallik, E.V. Sampathkumaran, P.L. Paulose, Solid State Commun. Vol. 106 (1998), p.169.

Google Scholar

[3] S.R. Saha, H. Sugawara, T.D. Matsuda, H. Sato, R. Mallik, E.V. Sampathkumaran, Phys. Rev. B Vol. 60 (1999), p.12162.

Google Scholar

[4] S.R. Saha, H. Sugawara, T.D. Matsuda, Y. Aoka, H. Sato, E.V. Sampathkumaran, Phys. Rev. B Vol. 62 (2000), p.425.

Google Scholar

[5] G. Behr, W. Löser, H. Bitterlich, G. Graw, D. Souptel, E.V. Sampathkumaran, J. Cryst. Growth Vol. 237-239 (2002), p. (1976).

DOI: 10.1016/s0022-0248(01)02294-1

Google Scholar

[6] G. Graw, H. Bitterlich, W. Löser, G. Behr, J. Fink, L. Schultz, J. Alloys and Compounds Vol. 308 (2000), p.193.

DOI: 10.1016/s0925-8388(00)00894-x

Google Scholar

[7] G. Behr, W. Löser, G. Graw, H. Bitterlich, J. Fink, L. Schultz, Cryst. Res. & Technol Vol. 35 (2000), p.461.

DOI: 10.1002/1521-4079(200004)35:4<461::aid-crat461>3.0.co;2-d

Google Scholar

[8] E.V. Sampathkumaran, H. Bitterlich, K.K. Iyer, W. Löser, G. Behr, Phys. Rev. B Vol. 66 (2002), p.52409.

Google Scholar

[9] I. Mazilu, M. Frontzek, W. Löser, G. Behr, A. Teresiak, L. Schultz, J. Crystal Growth Vol. 275 (2005), p. e103.

DOI: 10.1016/j.jcrysgro.2004.10.134

Google Scholar

[10] D. Souptel, W. Löser, G. Behr, J. Cryst. Growth Vol. 300 (2007), p.538.

Google Scholar

[11] G. Behr, W. Löser, D. Souptel, G. Fuchs, I. Mazilu, C. Cao, A. Köhler, L. Schultz, B. Büchner, J. Cryst. Growth Vol. 310 (2008), p.2268.

DOI: 10.1016/j.jcrysgro.2007.11.227

Google Scholar

[12] Y. Xu, W. Löser, F. Tang,C. Blum, M. Frontzek, L. Liu, B. Büchner. Crystal Research and Technology Vol. 2 (2011), p.135.

Google Scholar

[13] Y. Xu, W. Löser, G. Behr, M. Frontzek, F. Tang, B. Büchner, L. Liu, J. Cryst. Growth Vol. 312 (2010), p. (1992).

Google Scholar

[14] I. Mazilu, A. Teresiak, J. Werner, G. Behr, C.D. Cao, W. Löser, J. Eckert, L. Schultz, J. Alloys Comp Vol. 454 (2008), p.221.

DOI: 10.1016/j.jallcom.2007.01.044

Google Scholar