Growth of n-Doped and p-Doped GaAs Nanowires by Au-Assisted Metalorganic Chemical Vapor Deposition: Effect of Dopants Flux Rates

Peng Zhang; Yan Liu; Jing Wei Guo; Xiao Pin Zhang

doi:10.4028/www.scientific.net/AMR.774-776.860

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 774-776Growth of n-Doped and p-Doped GaAs Nanowires by...

Growth of n-Doped and p-Doped GaAs Nanowires by Au-Assisted Metalorganic Chemical Vapor Deposition: Effect of Dopants Flux Rates

Abstract:

N-doped and p-doped GaAs nanowires (NWs) are grown on GaAs (111) B substrate using vapor-liquid-solid (VLS) mechanism via a metalorganic chemical vapor deposition (MOCVD) system. It is found that for n-type doped NWs growth rate is proportional the flux rates of dopant and the structure is pure zinc blende without any faults. For p-type doped NWs with large flux rates, there is a critical length, beyond which NWs will be kinked.

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Periodical:

Advanced Materials Research (Volumes 774-776)

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860-863

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.774-776.860

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Online since:

September 2013

Authors:

Peng Zhang, Yan Liu, Jing Wei Guo, Xiao Pin Zhang

Keywords:

GaAs, Nanowire, N-Doped, P-Doped

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