Effects of Low-Energy Electron Irradiation on Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors

Chao Chen; Xing Zhao Liu

doi:10.4028/www.scientific.net/AMR.774-776.876

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 774-776Effects of Low-Energy Electron Irradiation on...

Effects of Low-Energy Electron Irradiation on Enhancement-Mode AlGaN/GaN High-Electron-Mobility Transistors

Abstract:

The effects of low energy (1.8 MeV) electron irradiation on enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) have been reported. When the dose up to 1.1×10¹⁶ cm^-2, the saturation drain current and maximal transconductance of E-mode AlGaN/GaN HEMTs increase after irradiation. However, almost no change of threshold voltage and gate leakage current is observed. The results are explained by the creation of positive charges in the AlGaN layer by ionizing energy loss, especially the creation of N vacancies and Ga vacancies by non-ionizing energy loss. Moreover, low-energy electron irradiation could recover the electron mobility.

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Advanced Materials Research (Volumes 774-776)

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876-880

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https://doi.org/10.4028/www.scientific.net/AMR.774-776.876

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September 2013

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Chao Chen, Xing Zhao Liu

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AlGaN/GaN, Electron Irradiation, Enhancement-Mode High-Electron-Mobility Transistors

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