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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 774-776Enhancement of Electrical Properties of ZnO: Al...

Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO₂ Buffer Layers

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Abstract:

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO₂ buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10⁺²⁰/cm³. The resistivity of ZAO film with SiO₂ buffer layer was about 7.6×10^-3Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

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Periodical:

Advanced Materials Research (Volumes 774-776)

Pages:

954-959

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.774-776.954

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Online since:

September 2013

Authors:

Xiao Jing Wang

Keywords:

Al-Doped ZnO, Buffer Layer, Magnetron Sputtering, Structure and Properties, Thin Film

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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