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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 774-776Phase Evolutions in the Metallic Precursors of the...

Phase Evolutions in the Metallic Precursors of the Ternary Copper-Indium-Gallium System

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Abstract:

Two types of metallic precursors used for the growth of Cu (In,Ga)Se₂ were deposited from a single CuInGa ternary target and binary alloy CuGa and CuIn targets, respectively. Phase evolutions in the precursors of the ternary copper-indium-gallium system were investigated over the temperature range from room temperature to 500°C. Grazing incidence X-ray diffraction (GIXRD) and scanning electron microscopy (SEM) were applied to characterize evolution of phases and surface morphology in the precursor layers. With annealing temperatures increased, phase evolutions of Cu₉Ga₄, Cu₁₁In₉, Cu₁₆In₉ and CuIn were observed. Surface morphology of the two types of precursors changed significantly, which could support the phase evolutions in the ternary Cu-In-Ga system for reactive annealing processes. The existence of the final Cu₁₁In₉ phase, which is the most favorable intermetallic phase for the formation of CuInSe₂ and Cu (In,Ga)Se₂ thin films, may be transformed by a speculated peritectoid reaction of In and Cu₁₆In₉ to Cu₁₁In₉ under In-rich condition.

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Periodical:

Advanced Materials Research (Volumes 774-776)

Pages:

974-980

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.774-776.974

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Online since:

September 2013

Authors:

Jian Wang, Jie Zhu

Keywords:

Copper-Indium-Gallium, Metallic Precursors, Peritectoid Reaction, Phase Evolution, Surface Morphology

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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